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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Rao, V. Ramgopal
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Publications (4/4 displayed)
- 2015Spin-coatable, photopatternable magnetic nanocomposite thin films for MEMS device applicationscitations
- 2015Insight into the charge transport and degradation mechanisms in organic transistors operating at elevated temperatures in aircitations
- 2015Source/drain engineering in OFETs using self assembled monolayers of metal complexed porphyrinscitations
- 2013Anisotropic strain effect on electron transport in C60 organic field effect transistorscitations
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article
Insight into the charge transport and degradation mechanisms in organic transistors operating at elevated temperatures in air
Abstract
Operational stability of organic devices at above-room-temperatures in ambient environment is of imminent practical importance. In this report, we have investigated the charge transport and degradation mechanisms in pentacene based organic field effect transistors (OFETs) operating in the temperatures ranging from 25 ºC to 150 ºC under ambient conditions. The thin film characterizations techniques (X-ray photoelectron spectroscopy, X-ray diffraction and atomic force microscopy) were used to establish the structural and chemical stability of pentacene thin films at temperatures up to 150 ºC in ambient conditions. The electrical behavior of OFETs varies differently in different temperature bracket. Mobility, at temperatures below 110 ºC, is found to be thermally activated in presence of traps and temperature independent in absence of traps. At temperatures above 110 ºC mobility degrades due to polymorphism in pentacene or interfacial properties. The degradation of mobility is compensated with the decrease in threshold voltage at high temperatures and OFETs are operational at temperatures as high as 190 ºC. 70 ºC has been identified as the optimum temperature of operation for our OFETs where both device behavior and material properties are stable enough to ensure sustainable performance.