| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Majewski, Leszek A.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2020Low-voltage IGZO TFTs using solution-deposited OTS-modified Ta2O5 dielectriccitations
- 2016Cyanoethyl cellulose-based nanocomposite dielectric for low-voltage, solution-processed organic field-effect transistors (OFETs)citations
- 2015Dielectric materials for low voltage OFET operation
- 2015Solution-processed nanocomposite dielectrics for low voltage operated OFETscitations
- 2012Cyclopentadithiophene-benzothiadiazole oligomers and polymers; Synthesis, characterisation, field-effect transistor and photovoltaic characteristicscitations
- 2008Triarylamine polymers by microwave-assisted polycondensation for use in organic field-effect transistorscitations
- 2005Electrode specific electropolymerization of ethylenedioxythiophene: Injection enhancement in organic transistorscitations
- 2004Organic field-effect transistors with electroplated platinum contacts
- 2004Organic field-effect transistors with ultrathin gate insulator
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article
Solution-processed nanocomposite dielectrics for low voltage operated OFETs
Abstract
A novel, solution processed high-k nanocomposite/low-k polymer bilayer gate dielectric that enables the fabrication of organic field-effect transistors (OFETs) that operate effectively at 1 V in high yields is reported. Barium strontium titanate (BST) and barium zirconate (BZ) nanoparticles are dispersed in a poly (vinylidene fluoride-co-hexafluoropropylene) P(VDF-HFP) polymer matrix to form a high-k nanocomposite layer. This is capped with a thin layer (ca 30 nm) of cross-linked poly(vinyl phenol) (PVP) to improve the surface roughness and dielectric–semiconductor interface and reduces the leakage current by at least one order of magnitude. OFETs were fabricated using solution-processed semiconductors, poly(3,6-di(2-thien-5-yl)-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione)thieno[3,2-b]thiophene) and a blend of 6,13-bis (triisopropylsilylethynyl) pentacene and poly (α-methylstyrene), in high yield (>90%) with negligible hysteresis and low leakage current density (10−9 A cm−2 at ±1 V).