| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Majumdar, Sayani
Tampere University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2023Large-area synthesis of high electrical performance MoS2 by a commercially scalable atomic layer deposition processcitations
- 2023Large-area synthesis of high electrical performance MoS 2 by a commercially scalable atomic layer deposition processcitations
- 2023Large-area synthesis of high electrical performance MoS 2 by a commercially scalable atomic layer deposition processcitations
- 2022Giant magnetoresistance response in Sr 2 FeMoO 6 based organic spin valvescitations
- 2022Giant magnetoresistance response in Sr2FeMoO6 based organic spin valvescitations
- 2021Rubrene Thin Films with Viably Enhanced Charge Transport Fabricated by Cryo-Matrix-Assisted Laser Evaporationcitations
- 2019Passivation controlled field effect mobility in 2D semiconductor based FET devices for high performance logic circuit development on flexible platform
- 2019Electrochemical metallization ReRAMs (ECM) - Experiments and modellingcitations
- 2017Organic Spintronics: The First Decade and Beyondcitations
- 2016Toward Versatile Sr2FeMoO6-Based Spintronics by Exploiting Nanoscale Defectscitations
- 2015Defect induced enhanced low field magnetoresistance and photoresponse in Pr0.6Ca0.4MnO3 thin films
- 2015Interfacial properties of organic semiconductor-inorganic magnetic oxide hybrid spintronic systems fabricated using pulsed laser depositioncitations
- 2015Observation of ferromagnetic ordering in conjugated polymers exhibiting OMAR effectcitations
- 2014Comparative study of spin injection and transport in Alq3 and Co –phthalocyanine-based organic spin valvescitations
- 2013Decay in spin diffusion length with temperature in organic semiconductors:An insight of possible mechanismscitations
- 2013Effect of strain and grain boundaries on dielectric properties in La 0.7 Sr 0.3 MnO 3 thin filmscitations
- 2013Comparative Study of Persistent Photo-Induced Magnetization in Low and Intermediate Bandwidth Manganite Thin Filmscitations
- 2013Pulsed laser deposition of La1-xSrxMnO3 : thin-film properties and spintronic applicationscitations
- 2013Effect of strain and grain boundaries on dielectric properties in La 0.7Sr0.3MnO3 thin filmscitations
- 2012Stress and defect induced enhanced low field magnetoresistance and dielectric constant in La0.7Sr0.3MnO3 thin filmscitations
- 2012On the origin of decay of spin current with temperature in organic spintronic devicescitations
- 2010Organic Spintronicscitations
- 2008Effect of La(0.67)Sr(0.33)MnO(3) electrodes on organic spin valvescitations
Places of action
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article
On the origin of decay of spin current with temperature in organic spintronic devices
Abstract
This article addresses the most challenging question facing the organic spintronics community today – what causes the universal loss of Giant Magnetoresistance (GMR) signal in organic spin valve devices made with different spin-polarized electrodes and organic semiconductor spacers? Careful analysis of our own and other experimental results available in literature indicate that transition of transport from polaron tunneling limit (suggested by the variable range hopping model) to thermally activated hopping limit (in the temperature range of 40–58 K) marks the most significant decrease of spin relaxation in organic semiconductors. With increasing occupancy of the available hopping sites by the thermally activated carriers, chances of spin flip inside the organic semiconductors increases significantly causing fast spin relaxation in the spin-valves.