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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Berger, Paul R.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2022Flexible Polymer Rectifying Diode on Plastic Foils with MoO3Hole Injection
- 2021Selective atomic layer deposition on flexible polymeric substrates employing a polyimide adhesive as a physical maskcitations
- 2021Selective atomic layer deposition on flexible polymeric substrates employing a polyimide adhesive as a physical maskcitations
- 2020RTD Light Emission around 1550 nm with IQE up to 6% at 300 Kcitations
- 20190.7-GHz Solution-Processed Indium Oxide Rectifying Diodescitations
- 2019930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire templatecitations
- 2017High performance, Low-voltage, Solution-processable Indium Oxide Thin Film Transistors using Anodic Al2O3 Gate Dielectric.
- 2017Negative differential resistance in polymer tunnel diodes using atomic layer deposited, TiO2 tunneling barriers at various deposition temperaturescitations
- 2012200-mm CVD grown Si/SiGe resonant interband tunnel diodes optimized for high peak-to-valley current ratios
- 2011Interfacial design and structure of protein/polymer films on oxidized AlGaN surfacescitations
- 2010Plasma-polymerized multistacked bipolar gate dielectric for organic thin-film transistorscitations
- 20084.8% efficient poly(3-hexylthiophene)-fullerene derivative (1:0.8) bulk heterojunction photovoltaic devices with plasma treated Ag Ox /indium tin oxide anode modificationcitations
- 2008Enhanced emission using thin Li-halide cathodic interlayers for improved injection into poly(p-phenylene vinylene) derivative PLEDscitations
- 2008Plasma-polymerized multistacked organic bipolar filmscitations
- 2006Low sidewall damage plasma etching using ICP-RIE with HBr chemistry of Si/SiGe resonant interband tunnel diodescitations
- 2000Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealingcitations
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article
Plasma-polymerized multistacked bipolar gate dielectric for organic thin-film transistors
Abstract
<p>A 10-layer stack of bipolar gate dielectric was formed by sequential layer-by-layer deposition using pulsed radio frequency (RF) plasma polymerization of allylamine and vinyl acetic acid monomers. Due to polar groups localized at the interfaces between each consecutive layer by alternating amine (-NH<sub>2</sub>) and carboxylic acid (-COOH) functional groups, a 60 nm thick multilayer structure demonstrated relatively high dielectric constant of 4.4 with extremely smooth and crack/pin-hole free surfaces. Without any post-deposition thermal annealing, a 10-layer stack of bipolar dielectric layers shows a low leakage current density (∼1 × 10<sup>-6</sup> A/cm <sup>2</sup> at 2 MV/cm) with high breakdown fields (>4 MV/cm). With a 10-layer stack of bipolar gate dielectrics, low supply voltage regioregular poly-(3-hexythiophene) (P3HT) organic thin-film transistors (OTFT) were tested. P3HT OTFTs demonstrated low-voltage operation and moderate field-effect mobility up to ∼3.4 × 10<sup>-3</sup> cm<sup>2</sup>/V s in the saturation region with the drain voltage a -12 V. The threshold voltage in the saturation region and on-off current ratio were measured to be +1.4 V and ∼1.2 × 10<sup>2</sup>, respectively.</p>