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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Acton, Orb
in Cooperation with on an Cooperation-Score of 37%
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Publications (6/6 displayed)
- 2013Effects of self-assembled monolayer structural order, surface homogeneity and surface energy on pentacene morphology and thin film transistor device performancecitations
- 2012Bottom-contact small-molecule n-type organic field effect transistors achieved via simultaneous modification of electrode and dielectric surfacescitations
- 2012Solid-state densification of spun-cast self-assembled monolayers for use in ultra-thin hybrid dielectricscitations
- 2011Simultaneous modification of bottom-contact electrode and dielectric surfaces for organic thin-film transistors through single-component spin-cast monolayerscitations
- 2010Effect of the phenyl ring orientation in the polystyrene buffer layer on the performance of pentacene thin-film transistorscitations
- 2009Study on the formation of self-assembled monolayers on sol-gel processed hafnium oxide as dielectric layerscitations
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article
Effect of the phenyl ring orientation in the polystyrene buffer layer on the performance of pentacene thin-film transistors
Abstract
The phenyl groups of polystyrene (PS) thin films untreated and thermally treated at 80 and 120 °C assume tilt angles of 27°, 39° and 62°, respectively. The PS films were inserted betweenSiO<sub>2</sub> and organic semiconductors as buffer layers for organic thin-film transistors (OTFTs). The results showed that a flat orientation of phenyl ring at the surface of the PS films optimized the surface energy of PS film, resulting in higher crystallinity of pentacene films deposited onto it and an improved interconnection between the pentacene crystalline domains. The device with the PS film thermally treated at 120 °C showed superior performance, affording a mobility as high as 4 cm<sup>2</sup>/V s, an on/off ratio of about 10<sup>7</sup>-10<sup>8</sup> and a threshold voltage of about 6.5 V in the saturation region. © 2010 Elsevier B.V.