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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Zibrov, Mikhail
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article
Positron lifetime study of ion-irradiated tungsten: Ion type and dose effects
Abstract
Polycrystalline recrystallized tungsten samples were irradiated with 7.5 MeV Si ions and 9 MeV Cu ions to threedifferent damage levels (0.01, 0.1, 0.5 dpa at 200 nm depth) at 295 K. The resulting vacancy-type defects in thesamples were studied using positron annihilation lifetime spectroscopy. The dependence of the average positronlifetime on the damage level is found to be non-linear: a steep increase at low damage levels with a tendency tosaturation at higher damage levels (>0.1 dpa). The average positron lifetime of Si and Cu-irradiated tungsten isvery similar at each damage level, suggesting similar vacancy-type defect structure. Deconvolution of thepositron lifetime spectra revealed that the dominant irradiation-induced defect type is a single vacancy. Thepresence of small vacancy clusters is also detected. Their fraction is found to increase with increasing damagelevel.