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Sulzbach, M. C.
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article
Characterization of oxygen self-diffusion in TiO2 resistive-switching layers by nuclear reaction profiling
Abstract
<p>Oxygen self-diffusion was investigated in TiO<sub>2</sub> layers employed for resistive-switching memories using resonant nuclear reaction profiling (NRP) and <sup>18</sup>O labeling. The layers were grown using physical vapor deposition technique (sputtering) and were polycrystalline. The diffusivity was measured over the temperature range 600–800 °C and the activation energy for oxygen self-diffusion in sputter-deposited TiO<sub>2</sub> films determined to be 1.09 ± 0.16 eV, a value consistent with results obtained by previous studies (Marmitt et al., 2017).</p>