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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Rossall, Andrew K.
University of Huddersfield
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2024Understanding the passivation layer formed by tolyltriazole on copper, bronze, and brass surfaces
- 2024Understanding the passivation layer formed by tolyltriazole on copper, bronze, and brass surfaces
- 2019Use of TRIDYN and medium energy ion scattering to calibrate an industrial arsenic plasma doping processcitations
- 2019Analysis of plasma enhanced pulsed laser deposition of transition metal oxide thin films using medium energy ion scatteringcitations
- 2017Combining dynamic modelling codes with medium energy ion scattering measurements to characterise plasma dopingcitations
- 2014Modelling of laser ablation and reactive oxygen plasmas for pulsed laser deposition of zinc oxidecitations
- 2010Laser interaction with low-density carbon foam
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article
Combining dynamic modelling codes with medium energy ion scattering measurements to characterise plasma doping
Abstract
© 2017 Elsevier B.V. Plasma doping ion implantation (PLAD) is becoming increasingly important in the manufacture of advanced semiconductor device structures but a fundamental understanding of PLAD is complicated. A model of PLAD into planar substrates has been constructed using the one dimensional computer code TRIDYN to predict collision cascades and hence substrate compositional changes during implantation. Medium Energy Ion Scattering (MEIS) measurements of dopant profiles in PLAD processed samples were used to calibrate the input ion and neutral fluxes to the model. Rules could then be proposed for how post implant profiles should be modified by a cleaning step. This learning was applied to a three dimensional TRI3DYN based model for PLAD implants into FinFET like structures. Comparison of the model to dopant profile measurements made by time of flight (TOF)-MEIS revealed the angular distributions of neutral species and doping mechanisms acting in three dimensional structures.