| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vickridge, Ian
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Exploring OH incorporation pathways in pulsed laser deposited EuOOH thin films
- 2021The carbon and hydrogen contents in ALD-grown ZnO films define a narrow ALD temperature windowcitations
- 2020Harnessing Atomic Layer Deposition and Diffusion to Spatially Localize Rare-Earth Ion Emitterscitations
- 2020Low resistivity amorphous carbon-based thin films employed as anti-reflective coatings on coppercitations
- 2017XPS and NRA investigations during the fabrication of gold nanostructured functionalized screen-printed sensors for the detection of metallic pollutantscitations
- 2015Rutherford Backscattering Spectrometry analysis of iron-containing Bi2Se3 Topological Insulator thin filmscitations
- 2014Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistorscitations
- 2011Ferromagnetism in Ga0.90Mn0.10As1-yPy: From the metallic to the impurity band conduction regimecitations
- 2008Li-ion intercalation in thermal oxide thin films of MoO3 as studied by XPS, RBS, and NRAcitations
- 2007Ageing of V2O5 thin films induced by Li intercalation multi-cyclingcitations
- 2006TaSiN diffusion barriers deposited by reactive magnetron sputteringcitations
- 2005Characterization of SiC thin film obtained by magnetron reactive sputtering : IBA, IR and Raman studies
- 2005Influence of substrate temperature on growth of nanocrystalline silicon carbide by reactive magnetron sputteringcitations
- 2005Control of the reactivity at a metal/silica interfacecitations
- 2004Characterization of SiC thin film obtained by magnetron reactive sputtering : IBA, IR and Raman studies
- 2004Study of thin hafnium oxides deposited by atomic layer depositioncitations
- 2002Oxygen isotopic exchange occurring during dry thermal oxidation of 6H SiCcitations
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article
Rutherford Backscattering Spectrometry analysis of iron-containing Bi2Se3 Topological Insulator thin films
Abstract
International audience ; Fe-containing Bi 2 Se 3 Topological Insulators (TI) thin films have been grown to investigate the intricate interplay between topological order and the incorporation of ferromagnetic atoms. Here we present the quantitative characterisation of the Bi 2 Se 3 thin films with up to 16 at% Fe incorporated during the growth process on GaAs (111) substrate by Molecular Beam Epitaxy. We report the elemental composition and depth profiles of the Bi 2 Se 3 :Fe films obtained using Rutherford Backscattering Spectrometry (RBS) and their formed crystalline phase obtained by X-Ray Diffraction (XRD). Resistance of the TI to beam-induced damage was investigated by channelling RBS. Using the elemental composition from RBS and the thickness from XRD measurements the Fe-free film density was deduced. For Fe-containing samples, the diffraction reveals the formation of two distinct crystalline phases, as well as their intergrowth pattern, in which the basal planes of Bi 2 Se 3 coexist with an additional Fe-Se phase. This intergrown composite, with chemical compatibility of the Fe-Se phase with the crystalline Bi 2 Se 3 structure, preserves the intrinsic topological surface states of the TI component despite the inhomogeneous distribution of the constituent phases. RBS analysis gives the stoichiometry of the Bi 2 Se 3 , and Bi 2 Se 3 :Fe samples (estimated between 0-16 atom% Fe) and gives insights into the composition of FeSe x phases present.