| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Prawer, S.
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Topics
Publications (8/8 displayed)
- 2016Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor depositioncitations
- 2015Structural transformation of implanted diamond layers during high temperature annealingcitations
- 2014Development of a templated approach to fabricate diamond patterns on various substratescitations
- 2014Multifunctional three-dimensional nanodiamond-nanoporous alumina nanoarchitecturescitations
- 2013Conventional and analytical electron microscopy study of phase transformation in implanted diamond layers
- 2013Direct measurement and modelling of internal strains in ion-implanted diamondcitations
- 2013Direct measurement and modelling of internal strains in ion-implanted diamondcitations
- 2010Bulk and surface thermal stability of ultra nanocrystalline diamond films with 10-30 nm grain size prepared by chemical vapor depositioncitations
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article
Structural transformation of implanted diamond layers during high temperature annealing
Abstract
In the recent years graphitization of ion-beam induced amorphous layers became the basic tool for device fabrication in diamond. The etchable graphitic layers can be removed to form free-standing membranes into which the desired structures can be sculpted using FIB milling. The optical properties of the devices fabricated using this method are assumed on the model of sharp diamond–air interface. The real quality of this interface could depend on degree of graphitization of the amorphous damage layers after annealing. In the present work the graphitization process was studied using conventional and analytical TEM. It was found that annealing at 550 °C results in a partial graphitization of the implanted volume with formation of the nano-crystalline graphitic phase sandwiched between layers of tetrahedral amorphous carbon. Annealing at 1400 °C resulted in complete graphitization of the amorphous layers. The average size of graphite nano-crystals did not exceed 5 nm with predominant orientation of c-planes normal to the sample surface.