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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Suvorova, Alexandra
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2018Nanogeochemistry of hydrothermal magnetitecitations
- 2018Nanoscale partitioning of Ru, Ir, and Pt in base-metal sulfides from the Caridad chromite deposit, Cubacitations
- 2016Thermally stable coexistence of liquid and solid phases in gallium nanoparticlescitations
- 2015Structural transformation of implanted diamond layers during high temperature annealingcitations
- 2014Effect of Interface energy and electron transfer on shape, plasmon resonance and SERS activity of supported surfactant-free gold nanoparticlescitations
- 2014Transformation of YSZ under high fluence argon ion implantationcitations
- 2013Conventional and analytical electron microscopy study of phase transformation in implanted diamond layers
- 2011Effects of ad-atom diffusivity throughout Sb-mediated formation of Ge/Si nanoislands
- 2008Structural and optical properties of ZnO thin films by rf magnetron sputtering with rapid thermal annealingcitations
- 2007Application of two-electron spectroscopy in reflection for studying electronic structure of surfaces and thin filmscitations
- 2007Multifunctional Nanocrystalline Thin Films of Er2O3: Interplay between Nucleation Kinetics and Film Characteristicscitations
- 2007Er2O3 as a high-K dielectric candidatecitations
- 2006Magnesium oxide as a candidate high-k gate dielectriccitations
- 2005ZrO2 film interfaces with Si and SiO2citations
- 2003Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates
- 2002Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates
- 2001Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by X-ray and synchrotron diffraction and transmission electron microscopycitations
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article
Transformation of YSZ under high fluence argon ion implantation
Abstract
In this work, we present the effect of extremely high fluence ion implantation on microstructure of single crystalline YSZ samples with three major low index orientations: (1 0 0), (1 1 0) and (1 1 1). The samples were implanted at room temperature with 150 keV Ar+ ions to a fluence of 1 × 1017 Ar/cm-2 corresponding to the peak damage level of ∼120 dpa and peak Ar atom concentration of ∼12 at.%. Rutherford backscattering/channeling spectrometry (RBS/C), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and associated analytical tools were used to determine the orientation dependent damage, surface morphology, and microstructure modifications of the implanted layers. Ar+ ion implantation resulted in formation of severely damaged layers, which however remained crystalline. The damage peak maximum, determined by RBS/C, indicated that the fourth damage accumulation stage, previously predicted for Ar-implanted YSZ, was achieved. The (1 1 0) oriented YSZ demonstrated slightly better radiation tolerance, as observed by RBS/C, compared to the other low index orientations. Microstructural studies revealed large cavities aligned parallel to the specimen surface, which emerged in a form of circular blisters on the surface. The origin of the cavities was related to the segregation of Ar atoms into pressurized gas filled bubbles. The crystallographic anisotropy of microstructural parameters (thickness of the damages layer, surface blister density and diameter, cavity dimensions) remains uncertain. © 2014 Elsevier B.V. All rights reserved.