People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Halsall, Mp
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2021Passivation of thermally-induced defects with hydrogen in float-zone siliconcitations
- 2018Graphene oxide films for field effect surface passivation of silicon for solar cellscitations
- 2018Deep-level analysis of passivation of transition metal impurities in siliconcitations
- 2013Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generationcitations
- 2013Size limit on the phosphorous doped silicon nanocrystals for dopant activationcitations
- 2010Formation of Si-nanocrystals in SiO2 via ion implantation and rapid thermal processingcitations
- 2010Structure and luminescence of rare earth-doped silicon oxides studied through their X-ray absorption near edge structure and X-ray excited optical luminescencecitations
- 2001Investigation into the deformation of carbon nanotubes and their composites through the use of Raman spectroscopycitations
Places of action
Organizations | Location | People |
---|
article
Size limit on the phosphorous doped silicon nanocrystals for dopant activation
Abstract
We studied the photoluminescence spectra of silicon nanocrystals doped with and without phosphorus as a function of isothermal annealing time. Silicon nanocrystals were prepared by the implantation of 80 keV Si+ into a 500 nm SiO2 film to an areal density of 8 × 1016 at/cm2. Half of the samples were coimplanted with P+ at 80 keV to 5 × 1015 at/cm2. The photoluminescence of the annealed samples were photo-excited at wavelength of 405 nm. For short anneal times, when the nanocrystal size distribution has a relatively small mean diameter, formation in the presence of phosphorus yields an increase in the luminescence intensity and a blue shift in the emission peak compared with intrinsic nanocrystals. As the mean size increases with annealing time, this enhancement rapidly diminishes and the peak energy shifts to the red. Our results indicate the donor electron generation depends strongly on the nanocrystal size. We also found a critical limit above which it allows dopant activation. © 2013 Elsevier B.V. All rights reserved.