| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kirkby, Karen Reeson
University of Manchester
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2013Chemical changes exhibited by latent fingerprints after exposure to vacuum conditions.citations
- 2013Integrated Ion Beam Analysis (IBA) in Gunshot Residue (GSR) characterisationcitations
- 2012Determination of the deposition order of overlapping latent fingerprints and inks using secondary ion mass spectrometry.citations
- 2010Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatmentcitations
- 2009Heavy ion implantation combined with grazing incidence X-ray absorption spectroscopy (GIXAS)
- 2009Trace element profiling of gunshot residues by PIXE and SEM-EDScitations
- 2009Characterization of junction activation and deactivation using non-equilibrium annealing
- 2008RBS/EBS/PIXE measurement of single-walled carbon nanotube modification by nitric acid purification treatmentcitations
- 2006Deactivation of B and BF2 profiles after non-melt laser annealing
- 2006Effect of buried Si SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junctioncitations
- 2006Deactivation of low energy boron implants into pre-amorphised Si after non-melt laser annealing with multiple scans
- 2006Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scanscitations
- 2005Evaluation of BBr2 + and B+ + Br + implants in silicon
- 2005Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJcitations
- 2005A potential integrated low temperature approach for superconducting MgB2 thin film growth and electronics device fabrication by ion implantationcitations
- 2005Comparison of elemental boron and boron halide implants into siliconcitations
- 2002Effect of implant conditions on the optical and structural properties of β-FeSi2
- 2001Microstructure of (100) silicon wafer implanted by 1 MeV Ru+ ionscitations
- 2001Electroluminescence of β-FeSi2 light emitting devices
- 2000Light-emitting diodes fabricated in silicon/iron disilicide
Places of action
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article
RBS/EBS/PIXE measurement of single-walled carbon nanotube modification by nitric acid purification treatment
Abstract
Single-walled carbon nanotubes (SWCNTs) have many potential applications, including a number of promising biological applications. Nitric acid treatment solubilises CNTs by introducing functional groups, as well as removing amorphous carbon contaminants. Here, we report simultaneous RBS/EBS/PIXE measurements of nitric acid treated SWCNTs, focussing on the metal, nitrogen and oxygen content. We found that nitrogen remains constant in the samples despite washing and dialysis indicating it has either bound irreversibly via intercalation with the SWCNT and/or has been included in functional groups. We also found that the ratio between oxygen and platinum (catalyst) remains constant with treatment time (sampled at 2, 4, 6 h), indicating no more functional groups are made after 2 h exposure.