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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Farshchi, R.
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Topics
Publications (6/6 displayed)
- 2009Structural, magnetic, and transport properties of laser-annealed GaAscitations
- 2008Electrical transport and ferromagnetism in Ga1-x Mnx As synthesized by ion implantation and pulsed-laser meltingcitations
- 2007Synthesis and optical properties of multiband III-V semiconductor alloyscitations
- 2007Synthesis of highly mismatched alloys using ion implantation and pulsed laser meltingcitations
- 2006Multiband GaNAsP quaternary alloyscitations
- 2006Doping and defect control of ferromagnetic semiconductors formed by ion implantation and pulsed-laser meltingcitations
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article
Synthesis of highly mismatched alloys using ion implantation and pulsed laser melting
Abstract
Highly mismatched alloys (HMAs) are dilute alloys whose fundamental properties are dramatically modified through the substitution of a relatively small fraction (up to ∼5%) of host atoms with a very different element. Specific examples are dilute III-V nitrides (e.g. GaN<sub>x</sub>As<sub>1-x</sub>) and II-VI oxides (e.g. ZnO<sub>x</sub>Te<sub>1-x</sub>) in which the conduction bands are strongly modified by the anticrossing interaction between localized states of O or N and the extended states of the semiconductor matrix. Using a highly non-equilibrium method: the combination of ion implantation and pulsed laser melting (II-PLM) we have synthesized a wide variety of III-N<sub>x</sub>-V<sub>1-x</sub> and II-O<sub>x</sub>-VI<sub>1-x</sub> alloys with N or O content up to 2%. The structural and optical properties of these HMAs have been systematically investigated. In particular, we demonstrated that the Zn<sub>1-y</sub>Mn<sub>y</sub>O<sub>x</sub>Te<sub>1-y</sub> dilute oxide is a multiband alloy that can be used for the realization of the single junction, high efficiency intermediate band solar cells.