| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Foran, G. J.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2011Extended x-ray absorption fine structure study of porous GaSb formed by ion implantationcitations
- 2009Anisotropic vibrations in crystalline and amorphous InPcitations
- 2007Modification of embedded Cu nanoparticlescitations
- 2007Formation and characterization of nanoparticles formed by sequential ion implantation of Au and Co into SiO2citations
- 2007Ion-irradiation-induced amorphization of Cu nanoparticles embedded in SiO2citations
- 2007EXAFS study of the amorphous phase of InP after swift heavy ion irradiationcitations
- 2007Amorphization of embedded Cu nanocrystals by ion irradiationcitations
- 2006Structural stability of Cu nanocrystals in SiO2 exposed to high-energy ion irradiationcitations
- 2006Size-dependent structural disorder in nanocrystalline Cu probed by synchrotron-based X-ray techniquescitations
- 2005EXAFS comparison of crystalline/continuous and amorphous/porous GaSbcitations
- 2005Irradiation induced defects in nanocrystalline Cucitations
- 2005Ion-irradiation-induced preferential amorphization of Ge nanocrystals in silicacitations
- 2005Disorder in Au and Cu nanocrystals formed by ion implantation into thin SiO2citations
- 2003Common structure in amorphised compound semiconductorscitations
- 2002Structural characterization of amorphised InAs with synchrotron radiationcitations
- 2001Structure and low-temperature thermal relaxation of ion-implanted germaniumcitations
- 2000Micro- and macro-structure of implantation-induced disorder in Gecitations
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article
EXAFS study of the amorphous phase of InP after swift heavy ion irradiation
Abstract
<p>Structural parameters of InP amorphised by electronic energy deposition were determined using extended X-ray absorption fine structure spectrometry. Samples were prepared with 180 MeV Au<sup>13+</sup> irradiation and a combination of semiconductor processing techniques and chemical etching. At the In K-edge of the amorphous material, only the first shell scattering peak is observed demonstrating the structural disorder introduced by the swift heavy ion irradiation. Furthermore, the presence of chemical disorder in the form of In-In bonds is shown. These homopolar bonds amount to 10% of the total number of In coordinations which is 3.73 ± 0.41 and thus less than the crystalline value of 4. In general, these results are similar to those reported for InP and other compound semiconductors amorphised by conventional ion implantation with a dominant nuclear energy deposition. However, slight differences in the values of the structural parameters obtained remain and further studies are necessary to determine their origin.</p>