Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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1.080 Topics available

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693.932 PEOPLE
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Cookson, D. J.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (7/7 displayed)

  • 2010Swift-heavy-ion-induced damage formation in III-V binary and ternary semiconductors27citations
  • 2007Modification of embedded Cu nanoparticles4citations
  • 2007Synthesis and characterization of ion-implanted Pt nanocrystals in SiO220citations
  • 2007Ion-irradiation-induced amorphization of Cu nanoparticles embedded in SiO224citations
  • 2007Amorphization of embedded Cu nanocrystals by ion irradiation39citations
  • 2006Structural stability of Cu nanocrystals in SiO2 exposed to high-energy ion irradiation8citations
  • 2006Size-dependent structural disorder in nanocrystalline Cu probed by synchrotron-based X-ray techniques7citations

Places of action

Chart of shared publication
Ridgway, M. C.
7 / 38 shared
Schnohr, C. S.
1 / 4 shared
Byrne, A. P.
1 / 8 shared
Giulian, R.
3 / 14 shared
Llewellyn, D. J.
6 / 11 shared
Johannessen, B.
6 / 12 shared
Foran, G. J.
5 / 17 shared
Araujo, L. L.
2 / 11 shared
Glover, C. J.
1 / 12 shared
Kluth, S. M.
1 / 3 shared
Chart of publication period
2010
2007
2006

Co-Authors (by relevance)

  • Ridgway, M. C.
  • Schnohr, C. S.
  • Byrne, A. P.
  • Giulian, R.
  • Llewellyn, D. J.
  • Johannessen, B.
  • Foran, G. J.
  • Araujo, L. L.
  • Glover, C. J.
  • Kluth, S. M.
OrganizationsLocationPeople

article

Synthesis and characterization of ion-implanted Pt nanocrystals in SiO2

  • Johannessen, B.
  • Ridgway, M. C.
  • Giulian, R.
  • Cookson, D. J.
  • Araujo, L. L.
  • Llewellyn, D. J.
Abstract

<p>Pt nanocrystals (NCs) produced by ion implantation in SiO<sub>2</sub> films were investigated by Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) and small angle X-ray scattering (SAXS). The implantations were performed at liquid nitrogen temperature using energies between 3.4 and 5.6 MeV and an ion fluence range of 2-30 × 10<sup>16</sup> cm<sup>-2</sup> and were followed by annealing in forming gas (95% N<sub>2</sub>, 5% H<sub>2</sub>) for one hour at temperatures between 500 and 1100 °C. TEM analysis revealed that the NCs are spherical in shape. The mean size of the NCs annealed at 1100 °C varied between 2.8 and 3.6 nm for the highest and lowest fluences, respectively, as determined with both TEM and SAXS. In contrast to previous studies on ion implanted metal NCs, larger Pt NCs are located far beyond the Pt peak concentration, potentially the result of a strongly defect mediated NC nucleation.</p>

Topics
  • Nitrogen
  • transmission electron microscopy
  • defect
  • forming
  • annealing
  • small angle x-ray scattering
  • Rutherford backscattering spectrometry