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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Johannessen, B.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2011Extended x-ray absorption fine structure study of porous GaSb formed by ion implantationcitations
- 2010Ion-irradiation-induced amorphization of cobalt nanoparticlescitations
- 2007Modification of embedded Cu nanoparticlescitations
- 2007Synthesis and characterization of ion-implanted Pt nanocrystals in SiO2citations
- 2007Formation and characterization of nanoparticles formed by sequential ion implantation of Au and Co into SiO2citations
- 2007Ion-irradiation-induced amorphization of Cu nanoparticles embedded in SiO2citations
- 2007Amorphization of embedded Cu nanocrystals by ion irradiationcitations
- 2006Structural stability of Cu nanocrystals in SiO2 exposed to high-energy ion irradiationcitations
- 2006Size-dependent structural disorder in nanocrystalline Cu probed by synchrotron-based X-ray techniquescitations
- 2005EXAFS comparison of crystalline/continuous and amorphous/porous GaSbcitations
- 2005Irradiation induced defects in nanocrystalline Cucitations
- 2005Disorder in Au and Cu nanocrystals formed by ion implantation into thin SiO2citations
Places of action
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article
Synthesis and characterization of ion-implanted Pt nanocrystals in SiO2
Abstract
<p>Pt nanocrystals (NCs) produced by ion implantation in SiO<sub>2</sub> films were investigated by Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) and small angle X-ray scattering (SAXS). The implantations were performed at liquid nitrogen temperature using energies between 3.4 and 5.6 MeV and an ion fluence range of 2-30 × 10<sup>16</sup> cm<sup>-2</sup> and were followed by annealing in forming gas (95% N<sub>2</sub>, 5% H<sub>2</sub>) for one hour at temperatures between 500 and 1100 °C. TEM analysis revealed that the NCs are spherical in shape. The mean size of the NCs annealed at 1100 °C varied between 2.8 and 3.6 nm for the highest and lowest fluences, respectively, as determined with both TEM and SAXS. In contrast to previous studies on ion implanted metal NCs, larger Pt NCs are located far beyond the Pt peak concentration, potentially the result of a strongly defect mediated NC nucleation.</p>