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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Foran, G. J.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2011Extended x-ray absorption fine structure study of porous GaSb formed by ion implantationcitations
- 2009Anisotropic vibrations in crystalline and amorphous InPcitations
- 2007Modification of embedded Cu nanoparticlescitations
- 2007Formation and characterization of nanoparticles formed by sequential ion implantation of Au and Co into SiO2citations
- 2007Ion-irradiation-induced amorphization of Cu nanoparticles embedded in SiO2citations
- 2007EXAFS study of the amorphous phase of InP after swift heavy ion irradiationcitations
- 2007Amorphization of embedded Cu nanocrystals by ion irradiationcitations
- 2006Structural stability of Cu nanocrystals in SiO2 exposed to high-energy ion irradiationcitations
- 2006Size-dependent structural disorder in nanocrystalline Cu probed by synchrotron-based X-ray techniquescitations
- 2005EXAFS comparison of crystalline/continuous and amorphous/porous GaSbcitations
- 2005Irradiation induced defects in nanocrystalline Cucitations
- 2005Ion-irradiation-induced preferential amorphization of Ge nanocrystals in silicacitations
- 2005Disorder in Au and Cu nanocrystals formed by ion implantation into thin SiO2citations
- 2003Common structure in amorphised compound semiconductorscitations
- 2002Structural characterization of amorphised InAs with synchrotron radiationcitations
- 2001Structure and low-temperature thermal relaxation of ion-implanted germaniumcitations
- 2000Micro- and macro-structure of implantation-induced disorder in Gecitations
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article
Structural stability of Cu nanocrystals in SiO2 exposed to high-energy ion irradiation
Abstract
<p>Cu nanocrystals (NCs) were synthesized in SiO<sub>2</sub> by ion implantation and thermal annealing. Annealing at two different temperatures of 950 °C and 650 °C yielded two different nanocrystal size distributions with an average diameter of 8.1 and 2.5 nm, respectively. Subsequently the NCs were exposed to 5.0 MeV Sn<sup>3+</sup> ion irradiation simultaneously with a thin Cu film as a bulk reference. The short-range atomic structure and average NC diameter was measured by means of extended X-ray absorption fine structure (EXAFS) spectroscopy and small angle X-ray scattering (SAXS), respectively. Consistent with the high regeneration rate of bulk elemental metals, no irradiation induced defects were observed for the reference, whereas the small NCs (2.5 nm) were dissolved as Cu monomers in the matrix. The latter was attributed to irradiation-induced mixing of Cu, Si and O based on dynamic binary collision simulations. For the large NCs (8.1 nm) only minor structural changes were observed upon irradiation, consistent with a more bulk-like pre-irradiation structure.</p>