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Foran, G. J.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2011Extended x-ray absorption fine structure study of porous GaSb formed by ion implantationcitations
- 2009Anisotropic vibrations in crystalline and amorphous InPcitations
- 2007Modification of embedded Cu nanoparticlescitations
- 2007Formation and characterization of nanoparticles formed by sequential ion implantation of Au and Co into SiO2citations
- 2007Ion-irradiation-induced amorphization of Cu nanoparticles embedded in SiO2citations
- 2007EXAFS study of the amorphous phase of InP after swift heavy ion irradiationcitations
- 2007Amorphization of embedded Cu nanocrystals by ion irradiationcitations
- 2006Structural stability of Cu nanocrystals in SiO2 exposed to high-energy ion irradiationcitations
- 2006Size-dependent structural disorder in nanocrystalline Cu probed by synchrotron-based X-ray techniquescitations
- 2005EXAFS comparison of crystalline/continuous and amorphous/porous GaSbcitations
- 2005Irradiation induced defects in nanocrystalline Cucitations
- 2005Ion-irradiation-induced preferential amorphization of Ge nanocrystals in silicacitations
- 2005Disorder in Au and Cu nanocrystals formed by ion implantation into thin SiO2citations
- 2003Common structure in amorphised compound semiconductorscitations
- 2002Structural characterization of amorphised InAs with synchrotron radiationcitations
- 2001Structure and low-temperature thermal relaxation of ion-implanted germaniumcitations
- 2000Micro- and macro-structure of implantation-induced disorder in Gecitations
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article
Disorder in Au and Cu nanocrystals formed by ion implantation into thin SiO2
Abstract
<p>Au and Cu nanocrystals (NCs) fabricated by ion implantation into thin SiO<sub>2</sub> and annealing were investigated by means of extended X-ray absorption fine structure (EXAFS) spectroscopy and transmission electron microscopy (TEM). In particular, the EXAFS Debye-Waller (D-W) factor is studied as a function of the annealing temperature. An increased D-W factor was observed for annealing temperatures 500 °C and 800 °C with respect to samples as implanted and annealed at 1100 °C. A possible explanation for this behavior could be stress induced plastic deformation due to the different thermal expansion of the metals and the SiO<sub>2</sub>.</p>