693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Johannessen, B.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2011Extended x-ray absorption fine structure study of porous GaSb formed by ion implantationcitations
- 2010Ion-irradiation-induced amorphization of cobalt nanoparticlescitations
- 2007Modification of embedded Cu nanoparticlescitations
- 2007Synthesis and characterization of ion-implanted Pt nanocrystals in SiO2citations
- 2007Formation and characterization of nanoparticles formed by sequential ion implantation of Au and Co into SiO2citations
- 2007Ion-irradiation-induced amorphization of Cu nanoparticles embedded in SiO2citations
- 2007Amorphization of embedded Cu nanocrystals by ion irradiationcitations
- 2006Structural stability of Cu nanocrystals in SiO2 exposed to high-energy ion irradiationcitations
- 2006Size-dependent structural disorder in nanocrystalline Cu probed by synchrotron-based X-ray techniquescitations
- 2005EXAFS comparison of crystalline/continuous and amorphous/porous GaSbcitations
- 2005Irradiation induced defects in nanocrystalline Cucitations
- 2005Disorder in Au and Cu nanocrystals formed by ion implantation into thin SiO2citations
Places of action
| Organizations | Location | People |
|---|
article
EXAFS comparison of crystalline/continuous and amorphous/porous GaSb
Abstract
<p>Ion irradiation of GaSb yields not only amorphization but also causes the material to become porous. For this report, GaSb has been irradiated to a dose sufficient to yield a porous network comprised of 15 nm wide rods. The local structure has been determined by EXAFS and compared with that of a polycrystalline standard. Significant Ga<sub>2</sub>O<sub>3</sub> formation is observed along with Sb-Sb bonding far in excess of the homopolar bonding observed in other amorphous III-V semiconductors.</p>