| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kirkby, Karen Reeson
University of Manchester
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2013Chemical changes exhibited by latent fingerprints after exposure to vacuum conditions.citations
- 2013Integrated Ion Beam Analysis (IBA) in Gunshot Residue (GSR) characterisationcitations
- 2012Determination of the deposition order of overlapping latent fingerprints and inks using secondary ion mass spectrometry.citations
- 2010Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatmentcitations
- 2009Heavy ion implantation combined with grazing incidence X-ray absorption spectroscopy (GIXAS)
- 2009Trace element profiling of gunshot residues by PIXE and SEM-EDScitations
- 2009Characterization of junction activation and deactivation using non-equilibrium annealing
- 2008RBS/EBS/PIXE measurement of single-walled carbon nanotube modification by nitric acid purification treatmentcitations
- 2006Deactivation of B and BF2 profiles after non-melt laser annealing
- 2006Effect of buried Si SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junctioncitations
- 2006Deactivation of low energy boron implants into pre-amorphised Si after non-melt laser annealing with multiple scans
- 2006Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scanscitations
- 2005Evaluation of BBr2 + and B+ + Br + implants in silicon
- 2005Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJcitations
- 2005A potential integrated low temperature approach for superconducting MgB2 thin film growth and electronics device fabrication by ion implantationcitations
- 2005Comparison of elemental boron and boron halide implants into siliconcitations
- 2002Effect of implant conditions on the optical and structural properties of β-FeSi2
- 2001Microstructure of (100) silicon wafer implanted by 1 MeV Ru+ ionscitations
- 2001Electroluminescence of β-FeSi2 light emitting devices
- 2000Light-emitting diodes fabricated in silicon/iron disilicide
Places of action
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article
Comparison of elemental boron and boron halide implants into silicon
Abstract
<p>This paper investigates the electrical activation of boron halide molecular implants into silicon and compares them to boron implants at the same effective energy. The implanted species: B<sup>+</sup>, BF2+, BCl2+ and BBr2+ were implanted to doses of 2 × 10<sup>14</sup> and 1 × 10 <sup>15</sup> B cm<sup>-2</sup> the energy of the molecular implants was calculated to give an effective boron implant energy of 5 keV. Samples cut from the wafers were annealed for 30 s at temperatures ranging from 800 °C to 1100 °C. Hall effect measurements were used to compare and contrast the electrical activation of the boron between the different halide species and doses. It was found that molecular implants of BBr2+ and BCl2+ do not enhance the electrical activation of boron to the same extent that BF2+ implants do. The BBr2+ implants are only comparable with boron after annealing at high temperatures (above 1000 °C). The BF2+ implants show enhanced electrical activation with respect to boron for all the annealing temperatures and doses studied. Rutherford backscattering spectroscopy (RBS) of silicon implanted with BBr2+ to a dose of 1 × 10<sup>15</sup> boron atoms cm<sup>-2</sup>, shows that an amorphous region is created during the implantation. This region fully re-grows after annealing at 1100 °C; lower temperature anneals remove only part of the amorphous layer. RBS channelling shows that a fraction of the bromine takes up substitutional lattice sites upon implantation, and that this fraction increases as the samples are annealed at temperatures above 600 °C with 40% of the B being in substitutional sites after annealing at 1050 °C.</p>