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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dobrowolska, M.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2012Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity bandcitations
- 2004Resonant spectroscopy of II-VI self-assembled quantum dots: Excited states and exciton-longitudinal optical phonon couplingcitations
- 2004Lattice location of Mn and fundamental Curie temperature limit in ferromagnetic Ga1-xMnxAscitations
- 2003Curie temperature limit in ferromagnetic Ga1-xMnxAs
- 2002Growth and optical properties of Mn-containing II-VI quantum dots
- 2002Determination of free hole concentration in ferromagnetic Ga 1-xMnxAs using electrochemical capacitance-voltage profilingcitations
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article
Lattice location of Mn and fundamental Curie temperature limit in ferromagnetic Ga1-xMnxAs
Abstract
Using ion channeling techniques, we find that a substantial fraction (up to 15%) of the Mn atoms reside in interstitial sites in Ga<sub>1-x</sub>Mn <sub>x</sub>As alloys. The increase of saturation magnetization, hole concentration and Curie temperature T<sub>C</sub> of Ga<sub>1-x</sub>Mn <sub>x</sub>As after low temperature annealing is found to be related to the relocation of Mn atoms from interstitial sites to form random clusters. We believe that the redistribution of the Mn atoms between different sites is controlled by the location of the Fermi energy. This conjecture is investigated using Ga<sub>1-x-y</sub>Mn<sub>x</sub>Be<sub>y</sub>As samples in which the concentration of Mn moments and the Fermi level position can be determined separately by Mn and Be doping. We find a dramatic increase of the concentration of Mn interstitials accompanied by a reduction of T<sub>C</sub> with increasing Be concentration, while the free hole concentration remains relatively constant at ∼5×10<sup>20</sup> cm<sup>-3</sup>. These results confirm that the maximum T<sub>C</sub> near 110 K in Ga<sub>1-x</sub>Mn<sub>x</sub>As is achieved for the Fermi energy corresponding to a saturation hole concentration in the range of 5×10<sup>20</sup>-1×10<sup>21</sup> cm<sup>-3</sup>. © 2004 Elsevier B.V. All rights reserved.