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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ott, Jennifer
Helsinki Institute of Physics
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2023Quantifying the Impact of Al Deposition Method on Underlying Al2O3/Si Interface Qualitycitations
- 2022Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applicationscitations
- 2022Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applicationscitations
- 2022Multispectral photon-counting for medical imaging and beam characterization - A project reviewcitations
- 2022Multispectral photon-counting for medical imaging and beam characterization — A project reviewcitations
- 2022(oral talk) Compatibility of Al-neal in processing of Si devices with Al2O3 layer
- 2022Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxidecitations
- 2021Application of atomic layer deposited thin films to silicon detectors ; Atomikerroskasvatuksella tuotettujen ohutkalvojen soveltaminen puolijohdeilmaisimiincitations
- 2021AC-coupled n-in-p pixel detectors on MCz silicon with atomic layer deposition (ALD) grown thin filmcitations
- 2021AC-coupled n-in-p pixel detectors on MCz silicon with atomic layer deposition (ALD) grown thin filmcitations
- 2021Al-neal Degrades Al2O3 Passivation of Silicon Surfacecitations
- 2021Cadmium Telluride X-ray pad detectors with different passivation dielectricscitations
- 2021Processing and Interconnections of Finely Segmented Semiconductor Pixel Detectors for Applications in Particle Physics and Photon Detectioncitations
- 2020Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxidecitations
- 2020Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxidecitations
- 2020Passivation of Detector-Grade Float Zone Silicon with Atomic Layer Deposited Aluminum Oxidecitations
- 2020Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxidecitations
- 2019Effects of Defects to the Performance of CdTe Pad Detectors in IBIC Measurementscitations
- 2019Cadmium Telluride X-ray pad detectors with different passivation dielectricscitations
- 2019Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxidecitations
- 2017Advanced processing of CdTe pixel radiation detectorscitations
- 2016Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectorscitations
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article
AC-coupled n-in-p pixel detectors on MCz silicon with atomic layer deposition (ALD) grown thin film
Abstract
<p>We report initial characterization of our novel sensor process solutions with AC-coupled n(+)/p(-)/p(+) pixel detectors made on 150 mm diameter p-type Magnetic Czochralski silicon (MCz-Si) wafers. The pixels were segmented in a 52 x 80 dual column array and designed to be AC capacitive coupled. The resistive coupling between pixels, allowing quality assurance probing prior the flip chip bonding, was realized with thin film metal-nitride resistors fabricated by sputtering deposition. This approach allows us to omit punch through resistor structures, which reduces the overall process complexity. Moreover, our previous studies have emphasized that applying ALD Aluminum Oxide (Al2O3) field insulator and passivation layer results in negative net oxide charge and thus additional p-spray or p-stop surface current termination structures are not necessary. Our focused application is a radiation-hard ALD AC-coupled pixel detector to be used in future particle physics experiments, such as the High-Luminosity Large Hadron Collider (HL-LHC), as well as photon counting applications. The pixel detectors were tested at Helsinki Institute of Physics (HIP) Detector laboratory and Ruder Bokovi Institute (RBI). We show measurement data of pixel detectors and other test structures. For the TiN resistors surrounding pixels, the resistance values were measured to be about 15 k Omega. Data of electrical properties, full depletion voltage and leakage current are shown as well. Our Transient Current Technique (TCT) measurements indicated clear pixel segmentation with excellent homogeneity. For further study, AC coupled sensors were hybridized to PSI46dig read out chips (ROC) by flip-chip interconnection technique and tested with a radioactive source.</p>