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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ott, Jennifer
Helsinki Institute of Physics
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2023Quantifying the Impact of Al Deposition Method on Underlying Al2O3/Si Interface Qualitycitations
- 2022Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applicationscitations
- 2022Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applicationscitations
- 2022Multispectral photon-counting for medical imaging and beam characterization - A project reviewcitations
- 2022Multispectral photon-counting for medical imaging and beam characterization — A project reviewcitations
- 2022(oral talk) Compatibility of Al-neal in processing of Si devices with Al2O3 layer
- 2022Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxidecitations
- 2021Application of atomic layer deposited thin films to silicon detectors ; Atomikerroskasvatuksella tuotettujen ohutkalvojen soveltaminen puolijohdeilmaisimiincitations
- 2021AC-coupled n-in-p pixel detectors on MCz silicon with atomic layer deposition (ALD) grown thin filmcitations
- 2021AC-coupled n-in-p pixel detectors on MCz silicon with atomic layer deposition (ALD) grown thin filmcitations
- 2021Al-neal Degrades Al2O3 Passivation of Silicon Surfacecitations
- 2021Cadmium Telluride X-ray pad detectors with different passivation dielectricscitations
- 2021Processing and Interconnections of Finely Segmented Semiconductor Pixel Detectors for Applications in Particle Physics and Photon Detectioncitations
- 2020Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxidecitations
- 2020Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxidecitations
- 2020Passivation of Detector-Grade Float Zone Silicon with Atomic Layer Deposited Aluminum Oxidecitations
- 2020Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxidecitations
- 2019Effects of Defects to the Performance of CdTe Pad Detectors in IBIC Measurementscitations
- 2019Cadmium Telluride X-ray pad detectors with different passivation dielectricscitations
- 2019Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxidecitations
- 2017Advanced processing of CdTe pixel radiation detectorscitations
- 2016Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectorscitations
Places of action
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article
Cadmium Telluride X-ray pad detectors with different passivation dielectrics
Abstract
The suitability of two low-temperature dielectric passivation layer processes for the fabrication of Cadmium Telluride (CdTe) X-ray detectors has been investigated. The CdTe crystals with a size of (10101) mm were coated with sputtered aluminum nitride (AlN) or with aluminum oxide (AlO) grown by the atomic layer deposition (ALD) method. The metallization contacts of the detectors were made by titanium tungsten (TiW) and gold (Au) metal sputtering depositions. The pad detector structures were patterned with proximity-contactless photolithography techniques followed by lift-off patterning of the electrodes. The detector properties were characterized at room temperature by Transient Current Technique (TCT) measurements. The obtained results were compared and verified by numerical TCAD simulations of the detector response. Our results indicate that higher signal charge was collected from samples with AlO. Furthermore, no significant laser light induced signal decay by CdTe material polarization was observed within order of 30 min of continuous illumination.