| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Luukka, Panja
Lappeenranta-Lahti University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2022Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applicationscitations
- 2022Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applicationscitations
- 2022Multispectral photon-counting for medical imaging and beam characterization - A project reviewcitations
- 2022Multispectral photon-counting for medical imaging and beam characterization — A project reviewcitations
- 2021AC-coupled n-in-p pixel detectors on MCz silicon with atomic layer deposition (ALD) grown thin filmcitations
- 2021Cadmium Telluride X-ray pad detectors with different passivation dielectricscitations
- 2021Processing and Interconnections of Finely Segmented Semiconductor Pixel Detectors for Applications in Particle Physics and Photon Detectioncitations
- 2020Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxidecitations
- 2019Effects of Defects to the Performance of CdTe Pad Detectors in IBIC Measurementscitations
- 2019Cadmium Telluride X-ray pad detectors with different passivation dielectricscitations
- 2017Advanced processing of CdTe pixel radiation detectorscitations
- 2016Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectorscitations
- 2016Processing of n(+)/p(-)/p(+) strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substratescitations
- 2014Pixel Detector Upgrade of CMS Experiment
Places of action
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article
Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
Abstract
In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MO resistances with a few µm of physical size required in ultra-fine pitch pixel detectors.