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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Shao, Shuyan
University of Groningen
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2023Addition of Ammonium Thiocyanate Alters the Microstructure and Energetic Landscape of 2D/3D Perovskite Films
- 2020Negative Thermal Quenching in FASnI3 Perovskite Single Crystals and Thin Filmscitations
- 2020Negative thermal quenching in FASnI 3 perovskite single crystals and thin filmscitations
- 2019Enhancing the crystallinity and perfecting the orientation of formamidinium tin iodide for highly efficient Sn-based perovskite solar cellscitations
- 2019Cooling, Scattering, and Recombination-The Role of the Material Quality for the Physics of Tin Halide Perovskitescitations
- 2016N-type polymers as electron extraction layers in hybrid perovskite solar cells with improved ambient stabilitycitations
Places of action
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article
Enhancing the crystallinity and perfecting the orientation of formamidinium tin iodide for highly efficient Sn-based perovskite solar cells
Abstract
<p>Low power conversion efficiency (PCE) and poor reproducibility are among the main challenges for tin-based perovskite solar cells (HPSCs). The facile formation of tin vacancies and oxidation of the divalent tin cation during the thin film fabrication process are among the causes of these problems, because the tin perovskite layer then becomes p-doped, resulting in significant trap-assisted recombination losses in devices. In this paper, we demonstrate that increasing the crystallinity of the tin perovskite film is an effective way to address the open issues with Sn-based perovskites. We succeed in improving the crystallinity of the 3D formamidinium tin iodide (FASnI(3)) grains, increasing their size, and perfecting their orientation in the out-of-plane direction by incorporating ethylammonium iodide (EAI) into a 2D/3D tin perovskite film (where 2D is PEA(2)FASn(2)I(7), PEA = phenylethylammonium). This leads to a decrease of traps and background charge carrier density, and therefore to decreased charge recombination losses in EA(x)2D/3D based devices, as compared not only to devices based on FASnI(3) but also to those based on 2D/3D mixtures. As a consequence, devices using a perovskite layer with composition EA(0.08)2D/3D exhibit much higher PCE (8.4%) and better reproducibility compared to devices based on mixed 2D/3D perovskites (7.7%) and 3D perovskite (4.7%).</p>