| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bach, Udo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024The balancing act between high electronic and low ionic transport influenced by perovskite grain boundariescitations
- 2024Ester-functionalised polythiophene interlayers for enhanced performance and stability of perovskite solar cellscitations
- 2023Machine Learning Enhanced High‐Throughput Fabrication and Optimization of Quasi‐2D Ruddlesden–Popper Perovskite Solar Cellscitations
- 2022Solution Processable Direct Bandgap Copper‐Silver‐Bismuth Iodide Photovoltaics: Compositional Control of Dimensionality and Optoelectronic Propertiescitations
- 2022Structural and Photophysical-Properties in Guanidinium-Iodide-Treated Perovskite Solar Cellscitations
- 2022Solution processable direct bandgap copper-silver-bismuth iodide photovoltaics : compositional control of dimensionality and optoelectronic propertiescitations
- 2022Back-Contact Perovskite Solar Cell Fabrication via Microsphere Lithographycitations
- 2021Microfluidic Processing of Ligand-Engineered NiO Nanoparticles for Low-Temperature Hole-Transporting Layers in Perovskite Solar Cellscitations
- 2021Can laminated carbon challenge gold? Towards universal, scalable and low-cost carbon electrodes for perovskite solar cellscitations
- 2020A Solution Processed Antireflective Coating for Back-Contact Perovskite Solar Cellscitations
- 2020The Performance-Determining Role of Lewis Bases in Dye-Sensitized Solar Cells Employing Copper-Bisphenanthroline Redox Mediatorscitations
- 2017Polypyridyl Iron Complex as a Hole-Transporting Material for Formamidinium Lead Bromide Perovskite Solar Cellscitations
- 2017Dipole-field-assisted charge extraction in metal-perovskite-metal back-contact solar cellscitations
- 2017A facile deposition method for CuSCN: Exploring the influence of CuSCN on J-V hysteresis in planar perovskite solar cellscitations
- 2016Enhancing the Optoelectronic Performance of Perovskite Solar Cells via a Textured CH3NH3PbI3 Morphologycitations
- 2016Parameters responsible for the degradation of CH3NH3PbI3-based solar cells on polymer substratescitations
- 2016Enhancing the optoelectronic performance of perovskite solar cells via a textured CH3NH3PbI3 morphologycitations
- 2015Screen-Printing of ZnO Nanostructures from Sol-Gel Solutions for Their Application in Dye-Sensitized Solar Cellscitations
- 2014Gas-assisted preparation of lead iodide perovskite films consisting of a monolayer of single crystalline grains for high efficiency planar solar cellscitations
Places of action
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article
A facile deposition method for CuSCN: Exploring the influence of CuSCN on J-V hysteresis in planar perovskite solar cells
Abstract
Inorganic hole–transporting materials (HTMs) are a promising class of compounds for improving the long-term stability of perovskite solar cells. In this study, copper(I) thiocyanate (CuSCN) has been applied as an HTM in planar-structured thin film perovskite solar cells based on ethylammonium lead(II) triiodide. A common obstacle associated with the deposition of inorganic HTMs in perovskite-based solar cell devices is the damaging effect of polar solvents, required during the solution-processed deposition step, on the underlying perovskite film. Here we describe a novel fabrication method that allows the deposition of a CuCSN layer on perovskite film, achieving a maximum power conversion efficiency of 9.6%. The magnitude of J-V hysteresis is found to be strongly dependent on the HTM used, with the phenomenon being much more prevalent in the CuSCN- and spiro-OMeTAD-based devices compared to CuI-based devices. Interestingly, CuSCN and CuI showed significantly different J-V hysteresis behaviors despite their similar physicochemical properties. Further characterization by open circuit voltage decay (OCVD) measurements revealed that the relaxation of the perovskite polarization depends on the light intensity and the adjacent HTM layer. We propose that the stronger J-V hysteresis in CuSCN compared to CuI is a result of defects generated during the deposition process and possible degradation at the material interfaces while other possibilities are also discussed.