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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Bos, Jan-Willem Gezienes
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Alloying and doping control in the layered metal phosphide thermoelectric CaCuPcitations
- 2023Thermoelectric properties and Kondo transition in the pseudo-gap metals TiNiSi and TiNiGe
- 2023Alloying and doping control in the layered metal phosphide thermoelectric CaCuPcitations
- 2023Thermoelectric properties of the aliovalent half-Heusler alloy Zn0.5Ti0.5NiSb with intrinsic low thermal conductivitycitations
- 2019Suppression of thermal conductivity without impeding electron mobility in n-type XNiSn half-Heusler thermoelectricscitations
- 2019Phase stability and thermoelectric properties of TiCoSb-TiM2Sn (M = Ni, Fe) Heusler compositescitations
- 2018Grain-by-grain compositional variations and interstitial metals - a new route towards achieving high performance in Half-Heusler thermoelectricscitations
- 2018Substitution versus full-Heusler segregation in TiCoSbcitations
- 2016Thermoelectric properties and high-temperature stability of the Ti1-xVxCoSb1-xSnx half-Heusler alloyscitations
- 2015Efficient thermoelectric performance in silicon nano-films by vacancy-engineeringcitations
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article
Efficient thermoelectric performance in silicon nano-films by vacancy-engineering
Abstract
<p>The introduction of large concentrations of lattice vacancies in silicon nano-films creates more than a 20-fold reduction in thermal conductivity, while electrical conductivity and Seebeck coefficient are largely maintained. This results in thermoelectric performance comparable to silicon nanowires, but crucially leaves the silicon structure indistinguishable from bulk silicon, resulting in a robust material that is straight-forward to fabricate. This finding significantly advances the potential of silicon ultra-thin-films as a high-performance thermoelectric material.</p>