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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Likonen, Jari
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2022Irradiation Damage Independent Deuterium Retention in WMoTaNbVcitations
- 2022High-fidelity patterning of AlN and ScAlN thin films with wet chemical etchingcitations
- 2022High-fidelity patterning of AlN and ScAlN thin films with wet chemical etchingcitations
- 2020Comparative study of deuterium retention in irradiated Eurofer and Fe–Cr from a new ion implantation materials facilitycitations
- 2020Impact of H-mode plasma operation on predamaged tungsten divertor tiles in ASDEX Upgradecitations
- 2020Impact of H-mode plasma operation on predamaged tungsten divertor tiles in ASDEX Upgradecitations
- 2018Production of ITER-relevant Be-containing laboratory samples for fuel retention investigations
- 2017The emissivity of W coatings deposited on carbon materials for fusion applicationscitations
- 2016Studies of Be migration in the JET tokamak using AMS with 10 Be markercitations
- 2014First results and surface analysis strategy for plasma-facing components after JET operation with the ITER-like wallcitations
- 2014An overview of the comprehensive First Mirror Test in JET with ITER-like wallcitations
- 2012Pulsed laser deposition using diffractively shaped excimer-laser beamscitations
- 2010First Mirrors Test in JET for ITERcitations
- 2010Surface pretreatment of austenitic stainless steel and copper by chemical, plasma electrolytic or CO 2 cryoblasting techniques for sol-gel coatingcitations
- 2008Structural investigation of re-deposited layers in JETcitations
- 2007Tungsten coatings for the JET ITER-like wall projectcitations
- 2007Investigation of tungsten coatings on graphite and CFCcitations
- 2006Photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressurescitations
- 2001Silicon diffusion in amorphous carbon filmscitations
Places of action
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article
High-fidelity patterning of AlN and ScAlN thin films with wet chemical etching
Abstract
We report on the anisotropic wet etching of sputtered AlN and Sc<sub>0.2</sub>Al<sub>0.8</sub>N thin films. With tetramethyl ammonium hydroxide at 80 °C, the etch rates along the c-axis were 330 and 30 nm/s for AlN and Sc<sub>0.2</sub>Al<sub>0.8</sub>N, respectively. Although the etching was anisotropic, significant lateral etching below the mask occurred, perpendicular to the c-axis. With a 1 µm Sc<sub>0.2</sub>Al<sub>0.8</sub>N film, it could be up to 1800 nm. We studied the lateral etching with molybdenum, SiO<sub>2</sub>, SiN<sub>x</sub> and TiO<sub>2</sub> masks, and found the leading cause for the lateral etching to be modification of the AlN or Sc<sub>0.2</sub>Al<sub>0.8</sub>N surface caused by ion bombardment and surface oxidation by ambient air. The lateral etching was reduced by optimizing the mask deposition and with thermal annealing. With Sc<sub>0.2</sub>Al<sub>0.8</sub>N, the lateral etching was reduced down to 35–220 nm depending on the mask, while with AlN, it was reduced to negligible. These results can be used for developing optimised mask deposition processes for better etch characteristics and for microfabrication of AlN and Sc<sub>x</sub>Al<sub>1‑x</sub>N thin-film structures.