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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Kleemann, Hans
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Publications (9/9 displayed)
- 2024Leaftronics: Natural lignocellulose scaffolds for sustainable electronicscitations
- 2024Infrasound Detection Using Polymer Networks in Liquid Filmscitations
- 2023Band Structure Engineering in Highly Crystalline Organic Semiconductorscitations
- 2023Leaf Electronicscitations
- 2022Growth and design strategies of organic dendritic networkscitations
- 2021Band gap engineering in blended organic semiconductor films based on dielectric interactionscitations
- 2021Solution-processed pseudo-vertical organic transistors based on TIPS-pentacenecitations
- 2021Vacuum processed large area doped thin-film crystalscitations
- 2010Organic Zener Diodes: Tunneling across the Gap in Organic Semiconductor Materialscitations
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article
Solution-processed pseudo-vertical organic transistors based on TIPS-pentacene
Abstract
<p>Powerful and versatile transistors are indispensable to realize the vision of future flexible electronics, e.g., for wearable active-matrix displays, smart sensors, or radio-frequency identification tags. Organic thinfilm transistors are considered to be a perfect match for flexible electronics. However, conventional organic thin-film transistors still do not match the demanding performance targets of many applications. Furthermore, often complex and expensive fabrication steps are employed for the fabrication of hero devices, which is not compatible with the paradigm of low-cost production of flexible electronics.</p><p>In this contribution, we present the first solution-processed vertical organic field-effect transistor (VOFET) with good on-state performance comparable to vacuum-processed VOFETs. This approach unites the advantages of a low-temperature, low-cost solution processing with an ultra-short channel transistor concept possibly enabling large-area, low-cost flexible electronics. We examine the influence of different crystal morphologies (spherulitic and ribbons) on the transistor performance by using spin and shear-coating as solution-based deposition methods. The solution-processed VOFETs reach channel width-normalized transconductances of up to 0.26 mS/mm with a charge carrier mobility of 4.8 cm2/V. S parameter measurements finally verify that transition frequencies up to 6 MHz are reachable with shear coated TIPS-pentacene. However, compared to small molecule-based VOFETs, the solution-processed VOFETs show an unfavorably high off-state current and hysteresis, which are explained by background doping and charge carrier trapping. Hence, in order to advance with, further optimization of the semiconductor material and the insulatoresemiconductor interface is thus required to qualify solution processed VOFETs for commercial applications. (c) 2021 Elsevier Ltd. All rights reserved.</p>