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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Singh, Deobrat
KTH Royal Institute of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2022First-principles calculations to investigate electronic structure and optical properties of 2D MgCl2 monolayercitations
- 2022Stability of and conduction in single-walled Si2BN nanotubescitations
- 2022Two-Dimensional Perovskite/HfS2 van der Waals Heterostructure as an Absorber Material for Photovoltaic Applicationscitations
- 2022Probing the electronic, optical and transport properties of halide double perovskites Rb2InSb(Cl,Br)6 for solar cells and thermoelectric applicationscitations
- 20222D Janus and non-Janus diamanes with an in-plane negative Poisson's ratio for energy applicationscitations
- 2021Asymmetry-Induced Redistribution in Sn(IV)–Ti(IV) Hetero-Bimetallic Alkoxide Precursors and Its Impact on Thin-Film Deposition by Metal–Organic Chemical Vapor Depositioncitations
- 2021Hydrogenation and oxidation enhances the thermoelectric performance of Si2BN monolayercitations
- 2020Rational Design of 2D h-BAs Monolayer as Advanced Sulfur Host for High Energy Density Li-S Batteriescitations
- 2020Rational Design of 2D h-BAs Monolayer as Advanced Sulfur Host for High Energy Density Li-S Batteriescitations
- 2019The influence of edge structure on the optoelectronic properties of Si2BN quantum dotcitations
- 2019The influence of edge structure on the optoelectronic properties of Si2BN quantum dotcitations
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article
2D Janus and non-Janus diamanes with an in-plane negative Poisson's ratio for energy applications
Abstract
Motivated by the successful synthesis of 2D C2F diamanes [Bakharev, P.V. et al., Nat. Nanotechnol. 15, 59-66 (2020)], we have systematically investigated the structural stability, in-plane mechanical, optoelectronic, photocatalytic, piezoelectric, and thermoelectric properties of non-Janus and Janus diamanes monolayers named as C2H, C2F, C2Cl, C4HF, C4HCl and C4FCl. The structural stability is confirmed by cohesive energy, phonon dispersion spectra, and mechanical properties. The electronic properties has been calculated by HSE06 functional and the band gap are found to be 3.85, 5.64, 2.32, 4.16, 0.73 and 1.91 eV for C-2H, C2F, C2Cl, C4HF, C4HCl and C4FCl, respectively. The hydrogen-containing non-Janus and Janus diamanes monolayers have a higher negative Poisson's ratio (NPR) and therefore are good auxetic materials. From the Poisson's ratio and Young's modulus of each configuration of non-Janus and Janus diamanes monolayer, anisotropic behavior was displayed. From the optical properties calculations, the refractive index values are around 1.5, which means that it will be a transparent monolayered materials. Also, C2Cl, C4HCl and C4FCl monolayers displayed high absorption spectra with an order of 105 cm(-1) in the visible region, which shows great applications in optoelectronic devices. Additionally, the valence and conduction band-edge positions of 2D Janus and non-Janus diamanes of C2H, C2F, and C2Cl and C4HF monolayers have to straddle the redox potentials of water. It means that the photogenerated electrons and holes are sufficient to drive the overall water splitting. Whereas non-Janus diamanes C4HCl, and C4FCl monolayers displayed only water oxidation. The investigated in-plane piezoelectric coefficient has larger in non-Janus diamanes C4HF, C4HCl, and C4FCl monolayers. Therefore, it is very useful in the field of piezoelectric applications. From the thermoelectric properties, the non-Janus and Janus diamanes monolayers have great thermoelectric efficiency and were found to be 10.52 and 10.63% for C2H and ...