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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Zalesak, Jakub
University of Salzburg
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Sicitations
- 2023W18O49 Nanowhiskers Decorating SiO2 Nanofiberscitations
- 2023Encapsulation of Uranium Oxide in Multiwall WS<sub>2</sub> Nanotubes
- 2023Mapping strain across Co80Ta7B13 / Co62Ta6B32 glassy interfaces
- 2023Probing the composition dependence of residual stress distribution in tungsten-titanium nanocrystalline thin filmscitations
- 2022Precipitation-based grain boundary design alters Inter- to Trans-granular Fracture in AlCrN Thin Filmscitations
- 2022Microstructure-dependent phase stability and precipitation kinetics in equiatomic CrMnFeCoNi high-entropy alloy: Role of grain boundariescitations
- 2021Powder Diffraction Data of Aluminum-Rich FCC-Ti1-xAlxN Prepared by CVDcitations
- 2020Nanoscale stress distributions and microstructural changes at scratch track cross-sections of a deformed brittle-ductile CrN-Cr bilayercitations
- 2020Evolution of stress fields during crack growth and arrest in a brittle-ductile CrN-Cr clamped-cantilever analysed by X-ray nanodiffraction and modellingcitations
- 2019Anisotropy of fracture toughness in nanostructured ceramics controlled by grain boundary designcitations
- 201830 nm X-ray focusing correlates oscillatory stress, texture and structural defect gradients across multilayered TiN-SiOx thin filmcitations
- 2017Peculiarity of self-assembled cubic nanolamellae in the TiN/AlN systemcitations
- 2016Combinatorial refinement of thin-film microstructure, properties and process conditions: iterative nanoscale search for self-assembled TiAlN nanolamellaecitations
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article
Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si
Abstract
Thin Silicon dies separated by laser dicing form a thin layer via redeposition of ablated silicon known as recast layer. This work analyzed the influence of the recast layer microstructure and nanoscale residual stress gradients on the bending strength of bare and metalized silicon dies <100 μm. Scanning and transmission electron microscopy revealed an intricate microstructure of ablated silicon and elements of the wafer backside metallization within the recast layer. Refined silicon grains decorated by nanoscopic metallic precipitates at their grain boundaries were observed. Cross-sectional synchrotron X-ray nanodiffraction revealed that the altered microstructure increased the tensile residual stress from 200 to 295 MPa for bare and metalized dies, respectively. Additionally, the metalized die exhibited gradients in residual stress and grain size between the die front- and backside. Despite their similar frontside bending strengths of ∼340 MPa, observed in 3-point bending experiments, a considerable strengthening of the backside from 425 up to 957 MPa was measured for bare and metalized die, respectively. The origins of the tensile residual stress and the influence of the backside metallization on the die bending strength are discussed.