| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Momand, Jamo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2022Ultrathin, sputter-deposited, amorphous alloy films of ruthenium and molybdenumcitations
- 2022Ultrathin, sputter-deposited, amorphous alloy films of ruthenium and molybdenumcitations
- 2022Phase Separation in Ge-Rich GeSbTe at Different Length Scales: Melt-Quenched Bulk versus Annealed Thin Filmscitations
- 2022Nanostructure and thermal power of highly-textured and single-crystal-like Bi2Te3 thin filmscitations
- 2022Nanostructure and thermal power of highly-textured and single-crystal-like Bi2Te3 thin filmscitations
- 2021Polytriphenylamine composites for energy storage electrodes:Effect of pendant vs. backbone polymer architecture of the electroactive groupcitations
- 2021Pulsed laser deposited stoichiometric GaSb films for optoelectronic and phase change memory applicationscitations
- 2021Pulsed laser deposited stoichiometric GaSb films for optoelectronic and phase change memory applicationscitations
- 2021Controlling phase separation in thermoelectric Pb1-xGexTe to minimize thermal conductivitycitations
- 2021Polytriphenylamine composites for energy storage electrodescitations
- 2020Single-Source, Solvent-Free, Room Temperature Deposition of Black γ-CsSnI 3 Filmscitations
- 2020Differences in Sb2Te3 growth by pulsed laser and sputter depositioncitations
- 2020Single‐Source, Solvent‐Free, Room Temperature Deposition of Black γ‐CsSnI3 Filmscitations
- 2019Chemical Solution Deposition of Ordered 2D Arrays of Room-Temperature Ferrimagnetic Cobalt Ferrite Nanodotscitations
- 2019High Resolution Imaging of Chalcogenide Superlattices for Data Storage Applicationscitations
- 2019Low temperature epitaxy of tungsten-telluride heterostructure filmscitations
- 2019High Resolution Imaging of Chalcogenide Superlattices for Data Storage Applications:Progress and Prospectscitations
- 2018Tailoring the epitaxy of Sb2Te3 and GeTe thin films using surface passivationcitations
- 2017Formation of resonant bonding during growth of ultrathin GeTe filmscitations
- 2016Crystallization Kinetics of Supercooled Liquid Ge-Sb Based on Ultrafast Calorimetrycitations
- 2016Ordered Peierls distortion prevented at growth onset of GeTe ultra-thin filmscitations
- 2014Reversible amorphous-crystalline phase changes in a wide range of Se1-xTex alloys studied using ultrafast differential scanning calorimetrycitations
Places of action
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article
Pulsed laser deposited stoichiometric GaSb films for optoelectronic and phase change memory applications
Abstract
Phase-change memory (PCM) holds great potential in realizing the combination of DRAM-like speeds with non-volatility and large storage capacity for future electronic devices including in-memory computing. However, various (reliability) issues related to e.g. too high programming current (power consumption), resistance drift, data retention (low crystallization temperature), phase separation and density change upon switching stand in the way to make PCM really attractive. GaSb thin films have interesting optical and electrical properties which are attractive for optoelectronic and PCM applications but so far reported stoichiometric GaSb compositions are Sb-rich which produced reliability issues in PCM devices. In this study, we managed to deposit stoichiometric GaSb thin films using pulsed laser deposition (PLD) by varying deposition parameters and conditions. Using electron microscopy, the morphology of deposited films and target surface and the compositional deviation from exact stoichiometry have been investigated. We show that the directional nature of laser-target interaction is directly responsible for film quality in PLD in which particulates with high number density are generated due to directional pillar formation. Suppressing this pillar formation, by a simple 180° target rotation, showed an increase in deposition yield by 60%, exact stoichiometric transfer from target to substrate, and large reduction in particulate density. Moreover, from XRD analysis, we show that exact stoichiometric transfer from target to substrate is crucial for structural integrity of the produced films. Temperature induced structural transformation from resistivity vs. temperature measurements show a high crystallization temperature of 250 °C for stoichiometric GaSb thin film. We believe the exact stoichiometric GaSb thin films with reduced particulate densities and favorable structural and (opto)electronic properties are attractive for future PCM devices.<br/><br/>