• Patil, Sumit

Abstract

<jats:p> The spectroscopic study of La<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin films deposited over Si and SiC at low RF power of 25 W by using indigenously developed plasma-enhanced atomic layer deposition (IDPEALD) system has been investigated. The tris (cyclopentadienyl) lanthanum (III) and O<jats:sub>2</jats:sub> plasma were used as a source precursor of lanthanum and oxygen, respectively. The [Formula: see text]1.2 nm thick La<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> over SiC and Si has been formed based on our recipe confirmed by means of cross-sectional transmission electron microscopy. The structural characterization of deposited films was performed by means of X-ray photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD). The XPS result confirms the formation of 3[Formula: see text] oxidation state of the lanthania. The XRD results reveals that, deposited La<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films deposited on SiC are amorphous in nature compare to that of films on Si. The AFM micrograph shows the lowest roughness of 0.26 nm for 30 cycles of La<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin films. </jats:p>

Topics

• amorphous
• x-ray diffraction
• thin film
• x-ray photoelectron spectroscopy
• Oxygen
• atomic force microscopy
• transmission electron microscopy
• Lanthanum
• atomic layer deposition