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Ekielski, Marek
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article
Structural and electrical studies on Ti/Al-based Au-free ohmic contact metallization for AlGaN/GaN HEMTs
Abstract
In order to fabricate the AlGaN/GaN-on-Si HEMTs on existing Si-CMOS production lines, manufacturing processes must meet the rigors of Si-CMOS technology eliminating Au. One of the requirements is formation of Au free, low resistivity ohmic contacts to AlGaN/GaN heterostructures. In this work we report structural and electrical studies of Ti/Al-based ohmic contacts to AlGaN/GaNHEMTs with TiN/Cu cover layers. Ohmic contacts have been observed after annealing of Ti/Al/TiN/Cu or Ti/Al/Ti/TiN/Cu/TiN multilayers on recessed AlGaN/ GaN structure at temperature of 550°C, specific contact resistance is about 2.3×10−4 Ωcm2, however, lower value was obtained after annealing at 750°C. The XRD and TEM studies reveal formation of additional phases during annealing, namely Al3Ti and Ti2AlN inside the volume of the metallization stack and AlN at metal/GaN interface. Measured dependence of contact resistance on temperature suggests a “metal-like” carrier transport mechanism in partially recessed Ti/Al/Ti/TiN/Cu ohmic contact to 2D electron gas.