| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Taube, Andrzej
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2023Carrier Trap Density Reduction at SiO2/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospherescitations
- 2020Development of Assembly Techniques for Connection of AlGaN/GaN/Si Chips to DBC substratecitations
- 2019Structural and electrical studies on Ti/Al-based Au-free ohmic contact metallization for AlGaN/GaN HEMTscitations
- 2018Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structurescitations
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article
Structural and electrical studies on Ti/Al-based Au-free ohmic contact metallization for AlGaN/GaN HEMTs
Abstract
In order to fabricate the AlGaN/GaN-on-Si HEMTs on existing Si-CMOS production lines, manufacturing processes must meet the rigors of Si-CMOS technology eliminating Au. One of the requirements is formation of Au free, low resistivity ohmic contacts to AlGaN/GaN heterostructures. In this work we report structural and electrical studies of Ti/Al-based ohmic contacts to AlGaN/GaNHEMTs with TiN/Cu cover layers. Ohmic contacts have been observed after annealing of Ti/Al/TiN/Cu or Ti/Al/Ti/TiN/Cu/TiN multilayers on recessed AlGaN/ GaN structure at temperature of 550°C, specific contact resistance is about 2.3×10−4 Ωcm2, however, lower value was obtained after annealing at 750°C. The XRD and TEM studies reveal formation of additional phases during annealing, namely Al3Ti and Ti2AlN inside the volume of the metallization stack and AlN at metal/GaN interface. Measured dependence of contact resistance on temperature suggests a “metal-like” carrier transport mechanism in partially recessed Ti/Al/Ti/TiN/Cu ohmic contact to 2D electron gas.