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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Vähänissi, Ville
Aalto University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (43/43 displayed)
- 2024(invited talk) Sulfur-hyperdoped silicon by ultrashort laser processing
- 2024Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interfacecitations
- 2024Contactless analysis of surface passivation and charge transfer at the TiO 2-Si interfacecitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024Bridging the gap between surface physics and photonicscitations
- 2024Contactless analysis of surface passivation and charge transfer at the TiO2-Si interfacecitations
- 2024(poster) ALD SiO2 provides efficient Ge surface passivation with a tailorable charge polarity
- 2024(poster) ALD SiO2 provides efficient Ge surface passivation with a tailorable charge polarity
- 2023Surface passivation of Germanium with ALD Al2O3: Impact of Composition and Crystallinity of GeOx Interlayercitations
- 2023(oral talk) Effective carrier lifetime in ultrashort pulse laser hyperdoped silicon: dopant concentration dependence and practical upper limits
- 2023Excellent Responsivity and Low Dark Current Obtained with Metal-Assisted Chemical Etched Si Photodiodecitations
- 2023Comparison of SiNx-based Surface Passivation Between Germanium and Siliconcitations
- 2023Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germaniumcitations
- 2023Chemical Excitation of Silicon Photoconductors by Metal-Assisted Chemical Etchingcitations
- 2023Chemical Excitation of Silicon Photoconductors by Metal-Assisted Chemical Etchingcitations
- 2023Status report on emerging photovoltaicscitations
- 2023Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications–Effects of Precursor and Operating Conditionscitations
- 2023Quantifying the Impact of Al Deposition Method on Underlying Al2O3/Si Interface Qualitycitations
- 2023Is Carrier Mobility a Limiting Factor for Charge Transfer in Tio2/Si Devices? A Study by Transient Reflectance Spectroscopycitations
- 2022Electron Injection in Metal Assisted Chemical Etching as a Fundamental Mechanism for Electroless Electricity Generationcitations
- 2022Electron Injection in Metal Assisted Chemical Etching as a Fundamental Mechanism for Electroless Electricity Generationcitations
- 2022Perspectives on Black Silicon in Semiconductor Manufacturing: Experimental Comparison of Plasma Etching, MACE and Fs-Laser Etchingcitations
- 2022Millisecond-Level Minority Carrier Lifetime in Femtosecond Laser-Textured Black Siliconcitations
- 2022(oral talk) Compatibility of Al-neal in processing of Si devices with Al2O3 layer
- 2021Efficient photon capture on germanium surfaces using industrially feasible nanostructure formationcitations
- 2021Al-neal Degrades Al2O3 Passivation of Silicon Surfacecitations
- 2020Modeling Field-effect in Black Silicon and its Impact on Device Performancecitations
- 2020Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxidecitations
- 2019Effect of MACE Parameters on Electrical and Optical Properties of ALD Passivated Black Siliconcitations
- 2019Compatibility of 3-D Printed Devices in Cleanroom Environments for Semiconductor Processingcitations
- 2019Compatibility of 3-D Printed Devices in Cleanroom Environments for Semiconductor Processingcitations
- 2019Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxidecitations
- 2018Elucidation of Iron Gettering Mechanisms in Boron-Implanted Silicon Solar Cellscitations
- 2018Rapid thermal anneal activates light induced degradation due to copper redistributioncitations
- 2017Electronic Quality Improvement of Highly Defective Quasi-Mono Silicon Material by Phosphorus Diffusion Getteringcitations
- 2017Toward Effective Gettering in Boron-Implanted Silicon Solar Cellscitations
- 2017Full recovery of red zone in p-type high-performance multicrystalline siliconcitations
- 2017Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stackscitations
- 2016Finite- vs. infinite-source emitters in silicon photovoltaicscitations
- 2014Iron Precipitation upon Gettering in Phosphorus-Implanted Czochralski Silicon and its Impact on Solar Cell Performancecitations
- 2013Passivation of black silicon boron emitters with atomic layer deposited aluminum oxidecitations
- 2008Metallization of Polymer Substrates for Flexible Electronics
Places of action
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article
Compatibility of 3-D Printed Devices in Cleanroom Environments for Semiconductor Processing
Abstract
3-D printing has potential to revolutionize manufacturing of customized low-cost scientific equipment, and numerous self-designed applications have already been realized and demonstrated. However, the applicability of 3-D printed devices to cleanrooms used for semiconductor processing is not as straightforward, as the controlled environment sets strict requirements for the allowed materials and items. This work investigates the opportunity to utilize 3-D printing in cleanrooms by analyzing three potentially suitable polymers (polylactic acid (PLA), acrylonitrile butadiene styrene (ABS) and polypropylene (PP)) for two applications that do not require particular chemical compatibility: a custom single wafer storage box and a wafer positioner for a metrology system. The designed equipment supplements commercial selection by introducing support for samples with non-standard shape or size and simultaneously reduces the price of often extensively expensive cleanroom equipment. The results show that the single wafer boxes 3-D printed from PLA and ABS generate as little particles as a commercial equivalent, whereas slightly more particles are found from a wafer stored in the self-printed PP box. Nevertheless, the number of particles on all wafers is in the same order of magnitude, indicating that 3-D printed boxes are not significant particle sources. The 3-D wafer positioner seems to cause a negligible particle increase on the manipulated wafer, while abrasion of the mechanical parts generate larger numbers of particles that may disperse in the environment. Regular cleaning of those parts is thus recommended, and applicability in a cleanroom environment will depend on the cleanliness constraints. Elemental analysis reveals that 3-D printed objects contain no other harmful metal impurities than those originating from colorants. Thus, 3-D printing filaments with natural color should be preferred for purposes, where metal contamination could be an issue, including semiconductor processing. Finally, 3-D printing filaments considered in this study are shown to be resistant to isopropanol and deionized water, which is critical for efficient cleaning for use of 3-D printed objects in cleanrooms. The results demonstrate that simple 3-D printed objects, such as wafer boxes or tweezers, are not notable contamination sources, and hence, are equally suitable for use in cleanrooms as the commercial equivalents.