• Raniero, W.
• Napoli, D.
• Boldrini, V.
• De Salvador, D.
• Carturan, S.
• Napolitani, E.
• Sgarbossa, Francesco
• Maggioni, G.

Abstract

Antimony sputter deposition and subsequent diffusion annealing in controlled atmosphere was implemented on Ge wafers, for achieving an optimized n+ doping aimed at the final application of these doped contacts to Ge-based radiation detectors. Two approaches were adopted for n+ doping: diffusion from Sb source sputtered directly on the Ge surface, and diffusion from a remote dopant source. Surface morphology was specifically investigated by electron (SEM-EDS) and atomic (AFM) microscopies. Diffusion profiles were characterized by Secondary Ion Mass Spectrometry (SIMS). The remote doping, obtained by using a Sb-coated Si wafer placed close to the Ge substrate during the diffusion annealing, allowed to attain defect-free surface morphologies and diffusion profiles compatible with well assessed equilibrium diffusion models. © 2017 Elsevier Ltd

Topics

• Deposition
• morphology
• surface
• scanning electron microscopy
• atomic force microscopy
• defect
• annealing
• Energy-dispersive X-ray spectroscopy
• spectrometry
• selective ion monitoring
• secondary ion mass spectrometry
• Germanium
• Antimony