| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Capellini, Giovanni
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024Full Picture of Lattice Deformation in a Ge<sub>1 − x</sub>Sn<sub>x</sub> Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxycitations
- 2024High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THzcitations
- 2024Full Picture of Lattice Deformation in a Ge 1-x Sn x Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductorscitations
- 2024Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductorscitations
- 2024High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THzcitations
- 2024The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale
- 2023Terahertz subwavelength sensing with bio-functionalized germanium fano-resonators
- 2023Isothermal Heteroepitaxy of Ge1-xSnx Structures for Electronic and Photonic Applicationscitations
- 2023Isothermal Heteroepitaxy of Ge 1- x Sn x Structures for Electronic and Photonic Applicationscitations
- 2022Terahertz subwavelength sensing with bio-functionalized germanium fano-resonatorscitations
- 2022Biocompatibility and antibacterial properties of TiCu(Ag) thin films produced by physical vapor deposition magnetron sputteringcitations
- 2022Biocompatibility and antibacterial properties of TiCu(Ag) thin films produced by physical vapor deposition magnetron sputteringcitations
- 2018Advanced GeSn/SiGeSn Group IV Heterostructure Laserscitations
- 2018Advanced GeSn/SiGeSn Group IV Heterostructure Laserscitations
- 2018Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instabilitycitations
- 2018Antiphase boundaries in InGaP/SiGe/Si : structural and optical properties
- 2018Photoluminescence from GeSn nano-heterostructurescitations
- 2017Fully coherent Ge islands growth on Si nano-pillars by selective epitaxycitations
- 2017Strain relaxation in epitaxial GaAs/Si (0 0 1) nanostructurescitations
- 2017Structural and optical characterization of GaAs nano-crystals selectively grown on Si nano-tips by MOVPEcitations
- 2016Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillarscitations
- 2015Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Sicitations
- 2015CMOS-compatible optical switching concept based on strain-induced refractive-index tuning
- 2007GeSi Intermixing in Ge Nanostructures on Si(111): An XAFS versus STM Studycitations
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article
Fully coherent Ge islands growth on Si nano-pillars by selective epitaxy
Abstract
Our recent experimental results of Ge nanoheteroepitaxy (NHE) on Si nanopillars (NPs) are reviewed to confirm the possibility of relaxed Ge growth on Si without misfit dislocations (MDs) formation by elastic deformation. Selective Ge growth is performed by using reduced pressure chemical vapor deposition (CVD) on two types of Si NPs with thermal SiO2 or CVD SiO2 sidewalls and on Si nanoislands (NIs) on SiO2. By using thermal SiO2 sidewall, compressive strain is generated in the Si pillar and fixed by the thermal SiO2. This results in an incoherent Ge growth on Si NPs due to MD formation. By using CVD SiO2 sidewall, tensile strain formation due to thermal expansion during prebake for Ge epi process is observed. However, strain in Si due to Ge growth is not dominant. By introducing a Si0.5Ge0.5 buffer layer, no MD and stacking faults are observed by cross section TEM. The shape of Ge on Si NPs becomes more uniform due to improved crystal quality. On Si NIs on SiO2, a clear compliance effect is observed after Ge growth. Coherent growth of Ge on Si is also realized on Si NIs by using Si0.5Ge0.5 buffer.