| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Salvalaglio, Marco
TU Dresden
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (31/31 displayed)
- 2022Controlling magnetic anisotropy in amplitude expansion of phase field crystal model
- 2021Scalable Disordered Hyperuniform Architectures via Nanoimprint Lithography of Metal Oxidescitations
- 2021Doubly degenerate diffuse interface models of anisotropic surface diffusioncitations
- 2021Doubly degenerate diffuse interface models of surface diffusioncitations
- 2020Hyperuniform monocrystalline structures by spinodal solid-state dewettingcitations
- 2020Self-assembly of nanovoids in Si microcrystals epitaxially grown on deeply patterned substratescitations
- 2020Hyperuniform Monocrystalline Structures by Spinodal Solid-State Dewettingcitations
- 2019CONVEXITY SPLITTING IN A PHASE FIELD MODEL FOR SURFACE DIFFUSION
- 2019Deterministic 3D self-assembly of Si through a rim-less and topology-preserving dewetting regime
- 2019Closing the gap between atomic-scale lattice deformations and continuum elasticitycitations
- 2019Deterministic three-dimensional self-assembly of Si through a rimless and topology-preserving dewetting regimecitations
- 2018Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instabilitycitations
- 2017Controlling the energy of defects and interfaces in the amplitude expansion of the phase-field crystal modelcitations
- 2017Strain Engineering in Highly Mismatched SiGe/Si Heterostructurescitations
- 2017Fully coherent Ge islands growth on Si nano-pillars by selective epitaxycitations
- 2017Complex dewetting scenarios of ultrathin silicon films for large-scale nanoarchitecturescitations
- 2017Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended filmcitations
- 2017Strain engineering in highly mismatched SiGe/Si heterostructurescitations
- 2016Thin-film growth dynamics with shadowing effects by a phase-field approachcitations
- 2016Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substratescitations
- 2016Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substratescitations
- 2016Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystalscitations
- 2016Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillarscitations
- 2016Elastic and plastic stress relaxation in highly mismatched SiGe/Si crystalscitations
- 2016From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructurescitations
- 2016From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructurescitations
- 2015Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Sicitations
- 2015Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing
- 2015Faceting of equilibrium and metastable nanostructures: a Phase-Field model of surface diffusion tackling realistic shapescitations
- 2015Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars
- 2015Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Sicitations
Places of action
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article
Fully coherent Ge islands growth on Si nano-pillars by selective epitaxy
Abstract
Our recent experimental results of Ge nanoheteroepitaxy (NHE) on Si nanopillars (NPs) are reviewed to confirm the possibility of relaxed Ge growth on Si without misfit dislocations (MDs) formation by elastic deformation. Selective Ge growth is performed by using reduced pressure chemical vapor deposition (CVD) on two types of Si NPs with thermal SiO2 or CVD SiO2 sidewalls and on Si nanoislands (NIs) on SiO2. By using thermal SiO2 sidewall, compressive strain is generated in the Si pillar and fixed by the thermal SiO2. This results in an incoherent Ge growth on Si NPs due to MD formation. By using CVD SiO2 sidewall, tensile strain formation due to thermal expansion during prebake for Ge epi process is observed. However, strain in Si due to Ge growth is not dominant. By introducing a Si0.5Ge0.5 buffer layer, no MD and stacking faults are observed by cross section TEM. The shape of Ge on Si NPs becomes more uniform due to improved crystal quality. On Si NIs on SiO2, a clear compliance effect is observed after Ge growth. Coherent growth of Ge on Si is also realized on Si NIs by using Si0.5Ge0.5 buffer.