| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Renard, Charles
Centre for Nanoscience and Nanotechnology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Epitaxy of hexagonal Ge-2H : lessons from in situ TEM observations
- 2023Epitaxy of hexagonal Ge-2H : growth regimes and related I3 defects
- 2022Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2Hcitations
- 2019In situ electrical characterization of YxTiy getter thin films during thermal activationcitations
- 2019Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells
- 2017GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgalliumcitations
- 2014Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO<inf>2</inf>citations
- 2014Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO 2citations
- 2008Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor depositioncitations
- 2007Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor depositioncitations
Places of action
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article
Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor deposition
Abstract
The lateral growth of Ge on, both, chemically and thermally formed silicon oxide layers, from nanoscale silicon seed is studied. We have developed a method using standard local oxidation of silicon to create well-localized nanoscale silicon seeds that enable to grow Ge on thick thermal silicon oxide. The germanium growth starts selectively from the silicon seed lines and proceeds by wetting the SiO(2) layer. Analysis by high-resolution transmission electron microscopy have shown that Ge layers grown above silicon oxide were perfectly monocrystalline and are free of defect. The only detected defects are situated at the Ge/Si interface. Published by Elsevier Ltd.