Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (1/1 displayed)

  • 2006Structural and magnetic properties of GeMn diluted magnetic semiconductor6citations

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Chart of shared publication
Favre, Luc
1 / 25 shared
Olivieri, B.
1 / 4 shared
Berbezier, Isabelle
1 / 26 shared
Ronda, A.
1 / 11 shared
Ayoub, J. P.
1 / 3 shared
Chart of publication period
2006

Co-Authors (by relevance)

  • Favre, Luc
  • Olivieri, B.
  • Berbezier, Isabelle
  • Ronda, A.
  • Ayoub, J. P.
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article

Structural and magnetic properties of GeMn diluted magnetic semiconductor

  • Padova, P. De
  • Favre, Luc
  • Olivieri, B.
  • Berbezier, Isabelle
  • Ronda, A.
  • Ayoub, J. P.
Abstract

Research on diluted magnetic semiconductors (DMS) has generated great interest for their potential application of semiconductors-based magnetic elements. Ferromagnetic (FM) semiconductors simultaneously exhibit semiconducting properties and spontaneous long-range FM order. The coexistence of these properties in a single material provides fertile ground for both fundamental studies and industrial applications. However, device applications have languished because of low magnetic ordering (Curie) temperature and the inability to incorporate these materials in conventional semiconductor material device. In this context, we have focused our study on structural and magnetic properties of MnxGe1−x DMS layers grown by molecular beam epitaxy on semiconducting Ge(1 1 1) substrate. Mn has been incorporated with increasing concentration from x = 0.02 to 0.1. Their structure has been characterized by transmission electron microscope using both conventional imaging and electronic diffraction. Ge–Mn alloy clusters have been clearly observed for the highest Mn concentration, and alloy phase identified. These observations were completed by classic SQUID magnetometry measurements. We will evidence a critical concentration of Ge above which precipitates of Ge3Mn5 form, enhancing the FM signal in the layer.

Topics
  • cluster
  • phase
  • semiconductor
  • precipitate