| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Vuorinen, Vesa
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (48/48 displayed)
- 2024Novel low-temperature interconnects for 2.5/3D MEMS integration: demonstration and reliabilitycitations
- 2024Low-Temperature Wafer-Level Bonding with Cu-Sn-In Solid Liquid Interdiffusion for Microsystem Packagingcitations
- 2024Electromigration Reliability of Cu3Sn Microbumps for 3D Heterogeneous Integration
- 2024Bonding of ceramics to silver-coated titanium—A combined theoretical and experimental study
- 2024Investigative characterization of delamination at TiW-Cu interface in low-temperature bonded interconnectscitations
- 2024Fatigue Crack Networks in Die-Attach Layers of IGBT Modules Under a Power Cycling Testcitations
- 2023Impact of Inherent Design Limitations for Cu–Sn SLID Microbumps on Its Electromigration Reliability for 3D ICscitations
- 2023Achieving low-temperature wafer level bonding with Cu-Sn-In ternary at 150 °Ccitations
- 2023Co, In, and Co–In alloyed Cu6Sn5 interconnects: Microstructural and mechanical characteristicscitations
- 2023Recent Developments in Low Temperature Wafer Level Metal Bonding for Heterogenous Integrationcitations
- 2022Investigation of the microstructural evolution and detachment of Co in contact with Cu–Sn electroplated silicon chips during solid-liquid interdiffusion bondingcitations
- 2022Finite element simulation of solid-liquid interdiffusion bonding process: Understanding process dependent thermomechanical stresscitations
- 2022Utilizing Co as a contact metallization for wafer-level Cu-Sn-In SLID bonding used in MEMS and MOEMS packagingcitations
- 2022Finite element simulation of solid-liquid interdiffusion bonding processcitations
- 2022Aluminium corrosion in power semiconductor devicescitations
- 2021Wafer Level Solid Liquid Interdiffusion Bondingcitations
- 2021A humidity-induced novel failure mechanism in power semiconductor diodescitations
- 2021Low-temperature Metal Bonding for Optical Device Packagingcitations
- 2019The Role of Ultrafine Crystalline Behavior and Trace Impurities in Copper on Intermetallic Void Formationcitations
- 2018Process Integration and Reliability of Wafer Level SLID Bonding for Poly-Si TSV capped MEMScitations
- 2018The effect of platinum contact metallization on Cu/Sn bondingcitations
- 2018Wafer-Level AuSn/Pt Solid-Liquid Interdiffusion Bondingcitations
- 2017XRD and ToF-SIMS study of intermetallic void formation in Cu-Sn micro-connectscitations
- 2017Gigahertz scanning acoustic microscopy analysis of voids in Cu-Sn micro-connectscitations
- 2017Key parameters influencing Cu-Sn interfacial void formation
- 2016Optimization of contact metallizations for reliable wafer level Au[sbnd]Sn bondscitations
- 2016Effect of Ni content on the diffusion-controlled growth of the product phases in the Cu(Ni)-Sn systemcitations
- 2016Void formation and its impact on Cu-Sn intermetallic compound formationcitations
- 2016Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride filmscitations
- 2016Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride filmscitations
- 2016Microstructural Evolution and Mechanical Properties in (AuSn)eut-Cu Interconnectionscitations
- 2014Phase evolution in the AuCu/Sn system by solid-state reactive diffusioncitations
- 2014Void formation in Cu-Sn SLID bonding for MEMScitations
- 2011Diffusion and growth of the µ phase (Ni6Nb7) in the Ni-Nb systemcitations
- 2010Study on the growth of Nb3Sn superconductor in Cu(Sn)/Nb diffusion couple
- 2010Impurity and alloying effects on interfacial reaction layers in Pb-free solderingcitations
- 2009Combined thermodynamic-kinetic analysis of the interfacial reactions between Ni metallization and various lead-free solderscitations
- 2009Effect of Ag, Fe, Au and Ni on the growth kinetics of Sn-Cu intermetallic compound layerscitations
- 2009Determination of diffusion parameters and activation energy of diffusion in V3Si phase with A15 crystal structurecitations
- 2009Understanding materials compatibility issues in electronics packaging
- 2008Formation of Intermetallic Compounds Between Liquid Sn and Various CuNix Metallizationscitations
- 2007Evolution of microstructure and failure mechanism of lead-free solder interconnections in power cycling and thermal shock testscitations
- 2007Solid-state reactions between Cu(Ni) alloys and Sncitations
- 2006Phase formation between lead-free Sn-Ag-Cu solder and Ni(P)/Au finishescitations
- 2006Interfacial reactions between Sn-based solders and common metallisations used in electronics
- 2005Analysis of the redeposition of AuSn4 on Ni/Au contact pads when using SnPbAg, SnAg, and SnAgCu solderscitations
- 2005Interfacial reactions between lead-free solders and common base materialscitations
- 2004Analyses of interfacial reactions at different levels of interconnectioncitations
Places of action
| Organizations | Location | People |
|---|
article
Impurity and alloying effects on interfacial reaction layers in Pb-free soldering
Abstract
<p>The objective of this review is to study the effect of minor alloying and impurity elements, typically present in electronics manufacturing environment, on the interfacial reactions between Sn and Cu, which is the base system for Pb-free soldering. Especially, the reasons leading to the observed interfacial reaction layers and their microstructural evolution are analysed. The following conclusions have been reached. Alloying and impurity elements can have three major effects on the reactions between the Sn-based solder and the conductor metal: Firstly, they can increase or decrease the reaction/growth rate. Secondly, additives can change the physical properties of the phases formed (in the case of Cu and Sn, ε and η). Thirdly they can form additional reaction layers at the interface or they can displace the binary phases that would normally appear and form other reaction products instead. Further, the alloying and impurity elements can be divided roughly into two major categories: (i) elements (Ni, Au, Sb, In, Co, Pt, Pd, and Zn) that show marked solubility in the intermetallic compound (IMC) layer (generally take part in the interfacial reaction in question) and (ii) elements (Bi, Ag, Fe, Al, P, rare-earth elements, Ti and S) that are not extensively soluble in IMC layer (only change the activities of species taking part in the interfacial reaction and do not usually participate themselves). The elements belonging to category (i) usually have the most pronounced effect on IMC formation. It is also shown that by adding appropriate amounts of certain alloying elements to Sn-based solder, it is possible to tailor the properties of the interfacial compounds to exhibit, for example, better drop test reliability. Further, it is demonstrated that if excess amount of the same alloying elements are used, drastic decrease in reliability can occur. The analysis for this behaviour is based on the so-called thermodynamic-kinetic method.</p>