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Rzodkiewicz, Witold
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article
Electronic properties of BaTiO<sub>3</sub>/4H-SiC interface
Abstract
The possibility of barium titanate (BaTiO3) application in silicon carbide (SiC) technology has been elaborated in terms of the dielectric film quality and properties of the BaTiO3/4H-SiC interface. High resistivity, high-k thin films containing La2O3 admixture were applied as gate insulator of metal-insulator-semiconductor (MIS) structure. The thin films were deposited by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO3 + La2O3 (2 wt.%) target on 8° off-axis 4H-SiC (0001) epitaxial layers doped with nitrogen. The results of current-voltage and capacitance-voltage measurements are presented for MIS capacitors.