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Kwietniewski, Norbert
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Topics
Publications (15/15 displayed)
- 2022Performance of nanoimprinted and nanocoated optical label-free biosensor - nanocoating properties perspectivecitations
- 2021TiAl-based Ohmic Contacts to p-type 4H-SiC
- 2020Ti and TiAl-based ohmic contacts to 4H-SiCcitations
- 2018Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structurescitations
- 2017Effects of ultra-shallow ion implantation from RF plasma onto electrical properties of 4H-SiC MIS structures with SiOx/HfOx and SiOxNy/HfOx double-gate dielectric stackscitations
- 2016Electrical characterization of ZnO/4H-SiC n–p heterojunction diodecitations
- 2016Properties of silicon nitride thin overlays deposited on optical fibers – effect of fiber suspension in radio frequency plasma-enhanced chemical vapor deposition reactorcitations
- 2014Materials and Technological Aspects of High-Temperature SiC Package Reliability
- 2014Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Filmscitations
- 2013Reactive impulse plasma ablation deposited barium titanate thin films on siliconcitations
- 2011Electronic properties of BaTiO<sub>3</sub>/4H-SiC interfacecitations
- 2010Measurements of Planar Metal -Dielectric Structures Using Split-Post Dielectric Resonatorscitations
- 2009Stability of gold bonding and Ti/Au ohmic contact metallization to n-SiC in high power devicescitations
- 2008Application of ZnO to passivate the GaN-based device structures
- 2007Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF<inf>4</inf> mixture gas mixing ratiocitations
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article
Electronic properties of BaTiO<sub>3</sub>/4H-SiC interface
Abstract
The possibility of barium titanate (BaTiO3) application in silicon carbide (SiC) technology has been elaborated in terms of the dielectric film quality and properties of the BaTiO3/4H-SiC interface. High resistivity, high-k thin films containing La2O3 admixture were applied as gate insulator of metal-insulator-semiconductor (MIS) structure. The thin films were deposited by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO3 + La2O3 (2 wt.%) target on 8° off-axis 4H-SiC (0001) epitaxial layers doped with nitrogen. The results of current-voltage and capacitance-voltage measurements are presented for MIS capacitors.