| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Schamm-Chardon, Sylvie
French National Centre for Scientific Research
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2023Fabrication of barium titanate nanopillars by neon ion milling
- 2023Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual latticecitations
- 2022Fabrication of barium titanate nanopillars by neon ion milling
- 2022Nano-composite MOx materials for NVMscitations
- 2021Fabrication by neon ion milling and characterization of barium titanate nanopillars
- 2019Structural and chemical investigation of interface related magnetoelectric effect in Ni/BiFe0.95Mn0.05O3 heterostructurescitations
- 2018Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopycitations
- 2018Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopycitations
- 2015A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applicationscitations
- 2014Structural study and ferroelectricity of epitaxial BaTiO3 films on silicon grown by molecular beam epitaxycitations
- 2013Fabrication of well-ordered arrays of silicon nanocrystals using a block copolymer maskcitations
- 2011The fabrication of tunable nanoporous oxide surfaces by block copolymer lithography and atomic layer depositioncitations
- 2011Nanocrystallized tetragonal metastable ZrO2 thin films deposited by metal-organic chemical vapor deposition for 3D capacitorscitations
- 2011Structural and electrical properties of Er-doped HfO2 and of its interface with Ge (001)citations
- 2011Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-kappa thin films deposited on Si and Ge as candidate for future gate dielectricscitations
- 2010O-3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substratescitations
- 2009Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3/Si Interfaces for Advanced Gate Stackscitations
- 2009Localized Silicon Nanocrystals Fabricated by Stencil Masked Low Energy Ion Implantation: Effect of the Stencil Aperture Size on the Implanted Dose
- 2009Characterization of ZrO2 thin films deposited by MOCVD for high-density 3D capacitors. Broad experience on MOCVD techniques and high-k materialscitations
- 2005Oxidation effects on transport characteristics of nanoscale MOS capacitors with an embedded layer of silicon nanocrystals obtained by low energy ion implantationcitations
- 2005Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applicationscitations
- 2005The effects of oxidation conditions on structural and electrical properties of silicon nanoparticles obtained by ultra-low-energy ion implantationcitations
- 2005Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applicationscitations
- 2003Multi-scale analysis of the dielectric properties and structure of resin/carbon-black nanocompositescitations
- 2001Contamination and the quantitative exploitation of EELS low-loss experimentscitations
- 2001VUV absorption coefficient measurements of borate matricescitations
Places of action
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article
Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applications
Abstract
International audience ; In nanocrystal (nc) metal-oxide-semiconductor (MOS) memory structures, a fine control of nc location and population is required for pinpointing the optimal device architectures. In this work, we show how to manipulate and control the depth-position, size and surface density of two dimensional (2D) arrays of Si ncs embedded in thin (<10 nm) SiO2 layers, fabricated by ultra-low energy (typically 1 keV) ion implantation and subsequent annealing. The influence of implantation and annealing conditions on the nc characteristics (e.g. size, density) and the charge storage properties of associated MOS structures is reported with particular emphasis upon the effect of annealing in N2-diluted–O2 gas mixture. The latter annealing conditions restore the integrity of the oxide and allow for the fabrication of non-volatile memory devices operating at low-gate voltages. Annealing in diluted oxygen has also an effect on the population of silicon ncs. Their evolution has been studied as a function of the annealing duration under N2 + O2 at 900 °C. An extended spherical Deal–Grove model for the self-limiting oxidation of embedded Si ncs has been carried out. It shows that stress effects, due to the deformation of the oxide, slows down the chemical oxidation rate and leads to a self-limiting oxide growth. The model predictions are in agreement with the experimental results.