| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sealy, B. J.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2008Structural and electrical characterisation of ion-implanted strained siliconcitations
- 2008Structural and electrical characterisation of ion-implanted strained siliconcitations
- 2005Evaluation of BBr2 + and B+ + Br + implants in silicon
- 2005Comparison of elemental boron and boron halide implants into siliconcitations
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article
Evaluation of BBr2 + and B+ + Br + implants in silicon
Abstract
<p>The work carried out here examines the suitability of BBr<sub>2</sub> <sup>+</sup> and B<sup>+</sup> + Br<sup>+</sup> implants into crystalline (1 0 0) silicon for ultra-shallow junctions (USJ) applications. Rutherford backscattering spectroscopy (RBS) shows that an amorphous region is created during implantation of BBr<sub>2</sub> <sup>+</sup>, eliminating the need for a separate pre-amorphising implant. This amorphous region re-grows during subsequent rapid thermal annealing and there is evidence that bromine retards the re-growth velocity. Hall Effect measurements after rapid thermal annealing show a difference in electrical activation between the BBr<sub>2</sub> <sup>+</sup> and B<sup>+</sup> + Br<sup>+</sup> implants with the latter having the lower activation. Anomalous Hall mobility is also observed for the molecular implant at lower annealing temperatures.</p>