| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Giubertoni, Damiano
Fondazione Bruno Kessler
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (31/31 displayed)
- 2024Enhancing the Deposition Rate and Uniformity in 3D Gold Microelectrode Arrays via Ultrasonic-Enhanced Template-Assisted Electrodeposition
- 2023Nano Hotplate Fabrication for Metal Oxide-Based Gas Sensors by Combining Electron Beam and Focused Ion Beam Lithography
- 2023Imaging of Antiferroelectric Dark Modes in an Inverted Plasmonic Latticecitations
- 2023Imaging of Antiferroelectric Dark Modes in an Inverted Plasmonic Latticecitations
- 2023Near Infrared Efficiency Enhancement of Silicon Photodiodes by Integration of Metal Nanostructures Supporting Surface Plasmon Polaritronscitations
- 2022Omnidirectional and broadband photon harvesting in self-organized Ge columnar nanovoidscitations
- 2022Omnidirectional and broadband photon harvesting in self-organized Ge columnar nanovoidscitations
- 2018The role of incidence angle in the morphology evolution of Ge surfaces irradiated by medium-energy Au ionscitations
- 2014GIXRF characterization of thin Ge1-xSnx films
- 2014Observation of point defect injection from electrical de-activation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing
- 2014Observation of point defect injection from electrical deactivation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing
- 2014Development of nano-topography during SIMS characterization of Ge1-xSnx alloy
- 2014Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls
- 2013Dynamic SIMS Characterization of Ge1-xSnx alloy
- 2012Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealingcitations
- 2012Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layerscitations
- 2010Non-melting annealing of silicon by CO2 lasercitations
- 2010Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in siliconcitations
- 2010Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatmentcitations
- 2009Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing
- 2009Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment
- 2008Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealingcitations
- 2008P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activationcitations
- 2006Deactivation of B and BF2 profiles after non-melt laser annealing
- 2006Effect of buried Si/SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junctioncitations
- 2006Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scanscitations
- 2006Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans
- 2005Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJcitations
- 2005Shallow BF2 implants in Xe-bombardment-preamorphized Si: the interaction between Xe and Fcitations
- 2004The interaction between Xe and F in Si (100) pre-amorphised with 20 keV Xe and implanted with low energy BF2citations
- 2003Hydrogen as a probe of the electronic properties of (InGa)(AsN)/GaAs heterostructures
Places of action
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article
Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJ
Abstract
For CMOS technology, generations beyond the 65 nm node a major goal is achieving highly activated, ultra-shallow and abrupt profiles. In the case of p-type (boron) implants, one method to achieve this is using Ge preamorphization (PAI) prior to ultra-low energy B implantation. However, for future technology nodes, new issues arise when bulk silicon is supplanted by silicon-on-insulator (SOI). Understanding the strong impact of the buried Si/SiO2 interface, will enable tests of fundamental models on defect evolution, electrical activation and diffusion. In the present study, boron has been implanted in germanium-preamorphized silicon and SOI wafers. Subsequent to implantation, an isochronal and isothermal annealing study of the samples was carried out. Electrical and structural properties were measured by Hall effect and SIMS techniques. The results show a range of effects in both substrate types, including TED and deactivation driven by interstitials from the end-of-range (EOR) defects. However, in the SOI material there is a lower boron deactivation and the EOR defects are eliminated at a lower thermal budget in SOI than in the bulk silicon due to competition between the upper SOI interface and the Si surface which both act as sinks for interstitials.