| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hayne, Manus
Lancaster University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023Defect formation in InGaAs/AlSb/InAs memory devices
- 2021Dilute Nitride GaInNAsSb for Next Generation Optical Communications
- 2021Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memorycitations
- 2020Experimental and theoretical determination of the transport properties of n-AlxGa1-xSb/GaSb
- 2019Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cellscitations
- 2017Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dotscitations
- 2017Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
- 2015Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depthscitations
- 2015Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depthscitations
- 2013Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stackscitations
- 2013Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stackscitations
- 2008Classification and control of the origin of photoluminescence from Si nanocrystals.
- 2008Classification and control of the origin of photoluminescence from Si nanocrystals.citations
- 2003Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation
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article
Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation
Abstract
We have used electrical measurements Deep level transient spectroscopy (DLTS) complemented by high-resolution X-ray diffraction (HRXRD) and Rutherford backscattering spectroscopy (RBS) measurements for assessment of the defects introduced in p-Si1-xGex during 160keV erbium ion implantation. From deep-level transient spectroscopy, it was observed that two prominent defects with discrete energy levels above the valence band, were introduced during Er ion implantation. The observed defects have similar signatures as those introduced during alpha-particle irradiation and electron beam metal deposition, indicating that these defects are more likely not related to Er but only to implantation induced damage such as primary defects. The generated defects expand the Si1-xGex lattice in the implanted region, which results in the presence of the tail in the high-resolution X-ray diffraction spectra. After rapid thermal annealing (RTA) at 850degreesC for 30 s in nitrogen ambient, a reduction in defect density as well as a relaxation of the Si1-xGex lattice is observed for all x values. A dominant Er-related sharp emission in the 1.541 mum region was observed at room temperature and neither the intensity of the Er emission nor the emission peak position were influenced by the Ge content or the strain relaxation in the epilayers. (C) 2003 Elsevier B.V. All rights reserved. ; status: published