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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sun, Kai
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2022VO 2 metasurface smart thermal emitter with high visual transparency for passive radiative cooling regulation in space and terrestrial applicationscitations
- 2022Room temperature phase transition of W-doped VO 2 by atomic layer deposition on 200 mm Si wafers and flexible substratescitations
- 2022Room temperature phase transition of W-doped VO2 by atomic layer deposition on 200 mm Si wafers and flexible substratescitations
- 2022VO2metasurface smart thermal emitter with high visual transparency for passive radiative cooling regulation in space and terrestrial applicationscitations
- 2020Multi-stack insulator to minimise threshold voltage drift in ZnO FET sensors operating in ionic solutionscitations
- 2012Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applicationscitations
- 2012Effect of an oxide cap layer and fluorine implantation on the metal-induced lateral crystallization of amorphous siliconcitations
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article
Multi-stack insulator to minimise threshold voltage drift in ZnO FET sensors operating in ionic solutions
Abstract
FET biosensors operating in an electrolyte experience a monotonic, temporal and relatively slow change in threshold voltage caused by the hydration of the insulator layer between the electrolyte and the FET's channel. Minimising this temporal change in threshold voltage is critical as, over time, the drain current of n-channel FETs decreases, making it difficult to distinguish between the signal generated in response to analyte - receptor binding events and the background noise generated by the electrolyte and the FET biosensor. While Rapid Thermal Annealing of the insulator layer is known to diminish threshold voltage drift and its negative effects, it is not compatible with a low temperature fabrication process of 200 °C. Our low temperature approach to minimising threshold voltage drift involves depositing a tri-layer insulator stack, consisting of a layer of HfO2 between two Al2O3 layers. Wetting ZnO NWFETs with PBS (10 mM phosphate, 150 mM KCl, pH 7.4) for an hour, showed that ZnO NWFETs with a stack insulator layer experienced a much smaller threshold voltage and drain current drift (100 mV, 0.064 nA) than ZnO NWFETs with a single material insulator layer (≥4300mV, 2.72 nA), Aluminium oxide in this case. Having established the resilience enhancing properties of the stack insulator layer on FETs operating in electrolytes of physiological relevant ionic concentrations; ZnO NWFETs with a stack insulator layer were shown to be capable of detecting the presence of the miDNA-21 strands. This, in effect, paves the way for miRNA sensing experiments in the near future and for exploring the potential of ZnO NWFETs as a diagnostic tool.